ZnO based compound semiconductor light emitting device and method for manufacturing the same
First Claim
1. A ZnO based compound semiconductor light emitting device comprising:
- a silicon substrate;
a silicon nitride film formed on the surface of said silicon substrate; and
a semiconductor layer lamination in which layers are laminated to form a light emitting layer, said layers having at least an n-type layer and a p-type layer which are formed on said silicon nitride film and also which are made of a ZnO based compound semiconductor.
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Abstract
A light emitting device includes a silicon substrate (1), a silicon nitride film (2) formed on the surface of the silicon substrate (1), at least an n-type layer (3), (4) and a p-type layer (6), (7) which are formed on the silicon nitride film (2) and also which are made of a ZnO based compound semiconductor, and a semiconductor layer lamination (11) in which layers are laminated to form a light emitting layer. Preferably this silicon nitride film (2) is formed by thermal treatment conducted in an atmosphere containing nitrogen such as an ammonium gas. Also, in another embodiment, a light emitting device is formed by growing a ZnO based compound semiconductor layer on a main face of a sapphire substrate, the main face being perpendicular to the C-face thereof. As a result, it is possible to obtain a device using a ZnO based compound with high properties such as an LED very excellent in crystallinity and having a high light emitting efficiency.
33 Citations
12 Claims
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1. A ZnO based compound semiconductor light emitting device comprising:
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a silicon substrate;
a silicon nitride film formed on the surface of said silicon substrate; and
a semiconductor layer lamination in which layers are laminated to form a light emitting layer, said layers having at least an n-type layer and a p-type layer which are formed on said silicon nitride film and also which are made of a ZnO based compound semiconductor. - View Dependent Claims (2, 3, 4)
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5. A method for manufacturing a semiconductor light emitting device comprising the steps of:
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forming a silicon nitride film on a surface of a silicon substrate by conducting heat treatment said silicon substrate in an atmosphere containing nitrogen; and
growing on said silicon nitride film a semiconductor layer lamination to form a light emitting layer which is made of a ZnO based compound semiconductor. - View Dependent Claims (6)
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7. A device having a ZnO based compound layer, comprising:
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a sapphire substrate having a main face that is perpendicular to a C-face thereof; and
a ZnO based compound layer which is epitaxially grown on said main face of said sapphire substrate. - View Dependent Claims (8)
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9. A method for growing a ZnO based compound crystal layer, wherein a ZnO based compound layer is grown epitaxially on a sapphire substrate so that a c-axis of said ZnO based compound layer may be perpendicular to a c-axis of said sapphire substrate.
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10. A ZnO based compound semiconductor light emitting device comprising:
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a sapphire substrate having a main face that is perpendicular to a C-face thereof; and
a semiconductor layer lamination in which layers are laminated to form a light emitting layer, said layers having at least an n-type layer and a p-type layer which are made of a ZnO based compound semiconductor grown epitaxially on said main face of said sapphire substrate. - View Dependent Claims (11, 12)
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Specification