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Semiconductor device including power MOSFET and peripheral device

  • US 20040099922A1
  • Filed: 07/18/2003
  • Published: 05/27/2004
  • Est. Priority Date: 03/16/2000
  • Status: Active Grant
First Claim
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7. A semiconductor device comprising:

  • a semiconductor substrate of a first conductivity type;

    a semiconductor layer of a second conductivity type disposed on a surface of the semiconductor substrate and having a main surface at an opposite side of the semiconductor substrate;

    a power MOSFET formed in a first trench that extends from the main surface of the semiconductor layer, penetrates the semiconductor layer, and reaches the semiconductor substrate, the power MOSFET comprising;

    a drift region of the first conductivity type disposed in the first trench and having an impurity concentration lower than that of the semiconductor substrate;

    a base region of the second conductivity type formed in the drift region and extending from the main surface in a perpendicular direction with respect to the main surface;

    a source region of the first conductivity type formed in the base region and extending from the main surface in the perpendicular direction;

    a gate insulating film disposed on a surface of a second trench that extends from the main surface in the perpendicular direction and penetrates the source region and the base region; and

    a gate electrode disposed on the gate insulating film and filling the second trench; and

    a peripheral device provided in the semiconductor layer at a region different from a region where the power MOSFET is provided.

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