Electron emitter

• US 20040104684A1
• Filed: 06/11/2003
• Published: 06/03/2004
• Est. Priority Date: 11/29/2002
• Status: Active Grant

• Current Assignee: NGK Insulators Limited
• Original Assignee: NGK Insulators Limited
• Inventors: Nanataki, Tsutomu, Takeuchi, Yukihisa, Ohwada, Iwao
• Granted Patent: US 7,187,114 B2
• Time in Patent Office: Days
• US Class Current: 315/169.1
• CPC Class Codes: H01J 1/30 Cold cathodes, e.g. field-emissive cathode
• CPC Class Codes: H01J 1/32 Secondary-electron-emitting electrodes H01J1/35 takes precedence

Abstract

An electron emitter has an emitter section formed on a substrate, and a cathode electrode and an anode electrode formed on a same surface of the emitter section. A slit is formed between the cathode electrode and the anode electrode. A drive voltage from a pulse generation source is applied between the anode electrode and the cathode electrode. The anode electrode is connected to the ground. A charging film is formed on a surface of the anode electrode.

Claims

1. An electron emitter comprising:

an emitter section made of a dielectric material;

a first electrode formed in contact with said emitter section;

a second electrode formed in contact with said emitter section, wherein

a slit is formed between said first electrode and said second electrode;

a drive voltage is applied between said first electrode and said second electrode to induce emission of electrons from at least a portion of said emitter section which is exposed through said slit; and

a charging film is formed at least on a surface of said second electrode.

2. An electron emitter according to claim 1, wherein said emitter section is made of a piezoelectric material, an anti-ferroelectric material, or an electrostrictive material.

3. An electron emitter according to claim 1, wherein polarization reversal occurs in an electric field E applied to said emitter section represented by E=Vak/d, where d is a width of said slit, and Vak is a voltage applied between said first electrode and said second electrode.

4. An electron emitter according to claim 3, wherein said voltage Vak is less than a dielectric breakdown voltage of said emitter section.

5. An electron emitter according to claim 3, wherein the width d of said slit is determined so that the voltage Vak applied between said first electrode and said second electrode has an absolute value of less than 100V.

6. An electron emitter according to claim 1, wherein said charging film is made of a piezoelectric material, an electrostrictive material, an anti-ferroelectric material, or a material having a low dielectric constant.

7. An electron emitter according to claim 6, wherein said material having a low dielectric constant is an oxide or a glass.

8. An electron emitter according to claim 1, wherein said charging film and said emitter section are made of a same dielectric material.

9. An electron emitter according to claim 1, wherein said charging film has a thickness in the range of 10 nm to 100 μ

m.

10. An electron emitter according to claim 1, wherein a protective film is formed on a surface of said first electrode.

11. An electron emitter according to claim 10, wherein said protective film and said charging film are made of a same material.

12. An electron emitter according to claim 10, wherein said protective film is made of an insulator or a highly resistive conductor having a low sputtering yield and a high evaporation temperature in vacuum.

13. An electron emitter according to claim 10, wherein said protective film has a thickness in the range of 10 nm to 100 nm.

14. An electron emitter according to claim 1, wherein the change of the voltage applied between said first electrode and said second electrode at the time of electron emission is 20V or less.

15. An electron emitter according to claim 1, wherein said first electrode and said second electrode are formed on an upper surface of said emitter section, and said slit is a gap.

16. An electron emitter according to claim 1, wherein said first electrode is formed in contact with one side of said emitter section, said second electrode is formed in contact with the other side of said emitter section, and said emitter section is formed in said slit.

17. An electron emitter according to claim 16, wherein said emitter section is formed in a tortuous pattern.

18. An electron emitter according to claim 1, wherein said drive voltage is applied between said first electrode and said second electrode such that said first electrode has a potential lower than a potential of said second electrode to reverse polarization of at least a portion of said emitter section which is exposed through said slit;

and

the polarization reversal causes emission of electrons in the vicinity of said first electrode.

19. An electron emitter according to claim 1, wherein said drive voltage is applied between said first electrode and said second electrode to reverse polarization of a portion of said emitter section which is exposed through said slit;

the polarization reversal causes positive poles of dipole moments in the vicinity of said first electrode to be oriented toward said first electrode, inducing emission of primary electrons from said first electrode; and

said emitted primary electrons impinge upon said emitter section to induce emission of secondary electrons from said emitter section.

20. An electron emitter according to claim 19, wherein said first electrode, a portion of said emitter section which is exposed through said slit, and a vacuum atmosphere define a triple point;

and

primary electrons are emitted from a portion of said first electrode in the vicinity of said triple point, and said emitted primary electrons impinge upon said emitter section to induce emission of secondary electrons from said emitter section.

21. An electron emitter according to claim 1, wherein a third electrode is provided above said emitter section at least at a portion facing said slit, and said third electrode is coated with a fluorescent layer.

22. An electron emitter according to claim 16, wherein

said emitter section is provided on an upper surface of a substrate;

said first electrode is formed in contact with one side of said emitter section;

said second electrode is formed in contact with the other side of said emitter section;

said emitter section is formed in said slit;

a third electrode is provided above said substrate; and

said third electrode is coated with a fluorescent layer.