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Ruthenium layer formation for copper film deposition

  • US 20040105934A1
  • Filed: 08/04/2003
  • Published: 06/03/2004
  • Est. Priority Date: 06/04/2002
  • Status: Active Grant
First Claim
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1. A method of forming a film on a substrate, comprising:

  • positioning the substrate within a process chamber; and

    forming a ruthenium layer on at least a portion of the substrate by sequentially chemisorbing monolayers of a ruthenium-containing compound and a reducing gas.

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