Composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device

• US 20040105986A1
• Filed: 11/07/2003
• Published: 06/03/2004
• Est. Priority Date: 11/13/2002
• Status: Active Grant

• Current Assignee: Panasonic Corporation (Panasonic Holdings Corporation), Shin-Etsu Chemical Company Limited
• Original Assignee: Matsushita Electric Industrial Company Limited (Panasonic Holdings Corporation), Shin-Etsu Chemical Company Limited
• Inventors: Nakagawa, Hideo, Sasago, Masaru, Ogihara, Tsutomu, Yagihashi, Fujio
• Granted Patent: US 7,309,722 B2
• Time in Patent Office: Days
• US Class Current: 428/447
• CPC Class Codes: C08K 3/34 Silicon-containing compounds
• CPC Class Codes: C08L 83/02 Polysilicates
• CPC Class Codes: C09D 183/04 Polysiloxanes
• CPC Class Codes: H01L 23/5222 Capacitive arrangements or effects of, or between wiring layers other capacitive arrangements H01L23/642
• CPC Class Codes: H01L 23/53228 the principal metal being copper
• CPC Class Codes: H01L 23/5329 Insulating materials
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H01L 2924/12044 OLED
• CPC Class Codes: Y10T 428/249953 Composite having voids in a component [e.g., porous, cellular, etc.]
• CPC Class Codes: Y10T 428/31663 As siloxane, silicone or silane

Abstract

The present invention provides a composition for film formation which can form a porous film that excels in dielectric properties, adhesion, film consistency and mechanical strength, and that is easily thinned; a porous film and a method for forming the same, and a high-performing and highly reliable semiconductor device which contains the porous film inside. More specifically, the composition for forming a porous film comprises a solution containing an amorphous polymer which is obtained by hydrolyzing and condensing at least one silane compound expressed by the general formula (R¹)_nSi(OR²)_4-n, and a zeolite sol which is formed by using a quaternary ammonium hydroxide. The method for forming a porous film comprises a coating step for coating the composition for forming a porous film; a subsequent drying step; and a porousness forming step.

Claims

1. A composition for forming a porous film comprising:

an amorphous polymer solution which is obtained by hydrolyzing and condensing at least one silane compound expressed by a general formula (1);

(R¹)_nSi(OR²)_4-n  

 

(1)

wherein R¹ represents a straight-chain or branched alkyl group or aryl group having 1 to 8 carbons, which can have a substituent, and when there is more than one R¹, the R¹s can be independent and the same as or different from each other;

R² represents an alkyl group having 1 to 4 carbons, and when there is more than one R², the R²s can be independent and the same as or different from each other; and

n is an integer of 0 to 3; and

a zeolite sol which is formed by using a quaternary ammonium hydroxide.

2. The composition for forming a porous film according to claim 1, wherein said zeolite sol is a zeolite sol having an average particle diameter of 3 to 500 nm which is obtained by hydrolyzing in the presence of said quaternary ammonium hydroxide and a catalyst a silane compound expressed by a general formula (2):

Si(OR³)₄  

 

(2)

wherein R³ represents a straight-chain or branched alkyl group having 1 to 4 carbons, and when there is more than one R³₁ the R³s can be independent and the same as or different from each other, and

by heating the silane compound.

3. The composition for forming a porous film according to claim 1 or claim 2, wherein said quaternary ammonium hydroxide is one or more compounds expressed by a general formula (3):

(R⁴)₄N⁺OH⁻

 

 

(3)

wherein R⁴ represents a straight-chain or branched alkyl group having 1 to 20 carbons, and can be independent and the same as or different from each other.

4. A method for forming a porous film comprising:

a coating step for coating said composition for forming a porous film according to any one of claims 1 to 3;

a subsequent drying step; and

a heating step for zeolite structure growth.

5. A porous film prepared by using said composition for forming a porous film according to any one of claims 1 to 3.

6. An interlevel insulator film prepared by using the composition for forming a porous film according to any one of claims 1 to 3.

7. A semiconductor device containing a porous film inside which is prepared by using a composition for forming a porous film comprising

an amorphous polymer solution that is prepared by hydrolyzing and condensing at least one silane compound expressed by a general formula (1):

(R¹)_nSi(OR²)_4-n  

 

(1)

wherein R¹ represents a straight-chain or branched alkyl group or aryl group having 1 to 8 carbons, which can have a substituent, and when there is more than one R¹, the R¹s can be independent and the same as or different from each other;

R² represents an alkyl group having 1 to 4 carbons, and when there is more than one R², the R²s can be independent and the same as or different from each other; and

n is an integer of 0 to 3; and

a zeolite sol prepared by using a quaternary ammonium hydroxide.

8. The semiconductor device of claim 7, wherein said zeolite sol is a zeolite sol having an average particle diameter of 3 to 500 nm which is obtained by hydrolyzing in the presence of said quaternary ammonium hydroxide and a catalyst a silane compound expressed by a general formula (2):

Si(OR³)₄  

 

(2)

wherein R³ represents a straight-chain or branched alkyl group having 1 to 4 carbons, and when there is more than one R³, the R³s can be independent and the same as or different from each other, and

by heating the silane compound.

9. The semiconductor device of claim 7 or claim 8, wherein said quaternary ammonium hydroxide is one or more compounds expressed by a general formula (3):

(R⁴)₄N⁺OH⁻

 

 

(3)

wherein R⁴ represents a straight-chain or branched alkyl group having 1 to 20 carbons, and can be independent and the same as or different from each other.

10. The semiconductor device according to any one of claims 7 to 9, wherein said porous film exists in an insulator film between metal interconnections in a same layer of multilayered interconnections, or in an interlevel insulator film between vertical metal interconnection layers.