Signal layer for generating characteristic optical plasma emissions
First Claim
1. A method of manufacturing a semiconductor structure including at least one electrical device, the method comprising:
- forming a signal layer on or in a wafer, wherein said signal layer comprises a chemical element that causes a characteristic optical emission when coming into contact with an etch plasma, said chemical element having no primary influence on the electrical properties of said at least one electrical device;
applying an etch plasma to the surface of the wafer; and
performing a plasma etch endpoint process when said characteristic optical emission is detected.
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Abstract
A technique is provided that may be used to improve optical endpoint detection in a plasma etch process. A semiconductor structure is manufactured that includes at least one electrical device. The technique is adapted for forming a signal layer on or in a wafer, wherein the signal layer comprises a chemical element that causes a characteristic optical emission when coming into contact with an etch plasma. The chemical element does not have a primary influence on the electrical properties of the electrical device. The signal layer is for use in a plasma etch process to detect a plasma etch endpoint if the characteristic optical emission is detected. The signal layer may be patterned and may be incorporated into a stop layer.
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Citations
50 Claims
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1. A method of manufacturing a semiconductor structure including at least one electrical device, the method comprising:
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forming a signal layer on or in a wafer, wherein said signal layer comprises a chemical element that causes a characteristic optical emission when coming into contact with an etch plasma, said chemical element having no primary influence on the electrical properties of said at least one electrical device;
applying an etch plasma to the surface of the wafer; and
performing a plasma etch endpoint process when said characteristic optical emission is detected. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16)
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- 17. An integrated circuit chip having a semiconductor structure including at least one electrical device, said semiconductor structure being manufactured by forming a signal layer on or in a wafer, applying an etch plasma to the surface of said wafer, and performing a plasma etch endpoint process when a characteristic optical emission is detected, wherein said signal layer comprises a chemical element that causes said characteristic optical emission when coming into contact with said etch plasma, and said chemical element does not have a primary influence on the electrical properties of said at least one electrical device.
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31. A method of manufacturing a semiconductor structure, the method comprising:
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forming a stop layer providing an etch plasma resistance effecting a low plasma etch rate, said stop layer comprising a chemical signal element, wherein said chemical signal element causes a characteristic optical emission when coming into contact with an etch plasma;
applying an etch plasma to the surface of a wafer; and
performing a plasma etch endpoint process when said characteristic optical emission is detected. - View Dependent Claims (32, 33, 34, 35)
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- 36. An apparatus for manufacturing a semiconductor structure, the apparatus being adapted for forming a stop layer providing an etch plasma resistance effecting a low plasma etch rate, said stop layer comprising a chemical signal element, wherein said chemical signal element causes a characteristic optical emission when coming into contact with an etch plasma, said stop layer being for use in a plasma etch process to detect a plasma etch endpoint if said characteristic optical emission is detected.
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39. A method of manufacturing a semiconductor structure, the method comprising:
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forming a signal layer on or in a wafer, wherein said signal layer is a patterned signal layer;
applying an etch plasma to the surface of said wafer; and
performing a plasma etch endpoint process when a characteristic optical emission is detected, wherein said characteristic optical emission is caused by a chemical element of said patterned signal layer when said chemical element comes into contact with said etch plasma. - View Dependent Claims (40, 41)
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42. A system having a layer forming tool and a plasma etch tool for manufacturing a semiconductor structure, the tools being adapted for forming a patterned signal layer on or in a wafer;
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applying an etch plasma to the surface of said wafer, and performing a plasma etch endpoint process when a characteristic optical emission is detected, wherein said patterned signal layer comprises a chemical element that causes said characteristic optical emission when coming into contact with said etch plasma;
said patterned signal layer being for use in a plasma etch process to detect a plasma etch endpoint if said characteristic optical emission is detected. - View Dependent Claims (43)
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- 44. An apparatus for manufacturing a semiconductor structure including at least one electrical device, the apparatus being adapted for forming a signal layer on or in a wafer, wherein said signal layer comprises a chemical element that causes a characteristic optical emission when coming into contact with an etch plasma, said chemical element having no primary influence on the electrical properties of said at least one electrical device, said signal layer being for use in a plasma etch process to detect a plasma etch endpoint if said characteristic optical emission is detected.
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48. A plasma etch apparatus for plasma etching a wafer including at least one electrical device in a semiconductor structure manufacturing process, the plasma etch apparatus comprising:
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a plasma generator for generating an etch plasma to be applied to the surface of said wafer;
an optical detector adapted for detecting optical plasma emissions; and
a control unit for initiating a plasma etch endpoint process, wherein said optical detector is configured to detect a characteristic optical emission caused by a chemical element of a signal layer when said chemical element comes into contact with the etch plasma, said chemical element having no primary influence on the electrical properties of said at least one electrical device, and wherein said control unit is configured to initiate said plasma etch endpoint process when said characteristic optical emission is detected. - View Dependent Claims (49, 50)
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Specification