Microparticle arrangement film, electrical connection film, electrical connection structure, and microparticle arrangement method

• US 20040106334A1
• Filed: 03/28/2003
• Published: 06/03/2004
• Est. Priority Date: 06/14/2000
• Status: Abandoned Application

• Current Assignee: Kenji Juchi, Masateru Fukuoka, Tatsuo Suzuki
• Original Assignee: Kenji Juchi, Masateru Fukuoka, Tatsuo Suzuki
• Inventors: Suzuki, Tatsuo, Juchi, Kenji, Fukuoka, Masateru
• Application Number:
  US10/311,227
• Publication Number:
  US 20040106334A1
• Time in Patent Office: Days
• US Class Current: 439/894
• CPC Class Codes: B23K 3/0607 Solder feeding devices
• CPC Class Codes: B23K 3/0623 for shaped solder piece feeding, e.g. preforms, bumps, balls, pellets, droplets
• CPC Class Codes: H01L 21/4853 Connection or disconnection of other leads to or from a metallisation, e.g. pins, wires, bumps
• CPC Class Codes: H01L 21/563 Encapsulation of active face of flip-chip device, e.g. underfilling or underencapsulation of flip-chip, encapsulation preform on chip or mounting substrate
• CPC Class Codes: H01L 2224/05571 the external layer being disposed in a recess of the surface
• CPC Class Codes: H01L 2224/05573 Single external layer
• CPC Class Codes: H01L 2224/11013 for holding or confining the bump connector, e.g. solder flow barrier
• CPC Class Codes: H01L 2224/11015 for aligning the bump connector, e.g. marks, spacers
• CPC Class Codes: H01L 2224/11334 using preformed bumps
• CPC Class Codes: H01L 2224/73203 Bump and layer connectors
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/01019 Potassium [K]
• CPC Class Codes: H01L 2924/01046 Palladium [Pd]
• CPC Class Codes: H01L 2924/01078 Platinum [Pt]
• CPC Class Codes: H01L 2924/01079 Gold [Au]
• CPC Class Codes: H01L 2924/01087 Francium [Fr]
• CPC Class Codes: H01L 2924/07811 Extrinsic, i.e. with electrical conductive fillers
• CPC Class Codes: H05K 2201/10378 Interposers
• CPC Class Codes: H05K 2201/10424 Frame holders
• CPC Class Codes: H05K 2203/0113 Female die used for patterning or transferring, e.g. temporary substrate having recessed pattern
• CPC Class Codes: H05K 2203/0338 : Transferring metal or conductive material other than a circuit pattern, e.g. bump, solder, printed component affixing a prefabricated conductor pattern H05K3/20
• CPC Class Codes: H05K 2203/041 : Solder preforms in the shape of solder balls soldering leadless components having an array of bottom contacts H05K3/3436
• CPC Class Codes: H05K 2203/082 : Suction, e.g. for holding solder balls or components
• CPC Class Codes: H05K 3/3436 : having an array of bottom contacts, e.g. pad grid array or ball grid array components
• CPC Class Codes: H05K 3/3478 : Applying solder preforms; Transferring prefabricated solder patterns
• CPC Class Codes: Y02P 70/50 : Manufacturing or production processes characterised by the final manufactured product

Abstract

The present invention provides a method for disposing specific fine particles at arbitrary positions of a film with efficiency and ease, in just proportion and under a stable condition, and a fine particle-disposed film, that is to say, a method for disposing fine particles that basically disposes one particle in one hole, and fine particle-disposed film, as well as a conductively connecting film and a conductively connected structure, when opposite fine electrodes are connected, enabling to carry out easily an electric connection of high connecting reliability in a short time without causing leakage from neighbor electrodes by employing a film in which conductive fine particles are disposed at arbitrary positions thereof.

The invention is a fine particle-disposed film, in which fine particles are disposed, the fine particles each having: an average particle diameter of 5 to 800 μm; an aspect ratio of less than 1.5; and CV value of 10% or less, wherein the film has holes at arbitrary positions in a surface thereof, the holes each having: an average hole diameter which is ½ to 2 times of the average particle diameter of the fine particle; the aspect ratio of less than 2; and the CV value of 20% or less, and the fine particles are disposed on the surface of the holes or inside the holes.

Claims

1. A fine particle-disposed film, in which fine particles are disposed, the fine particles each having:

an average particle diameter of 5 to 800 μ

m;

an aspect ratio of less than 1.5; and

CV value of 10% or less,

wherein the film has holes at arbitrary positions in a surface thereof, the holes each having;

an average hole diameter which is ½

to 2 times of the average particle diameter of the fine particle;

the aspect ratio of less than 2; and

the CV value of 20% or less, and

the fine particles are disposed on the surface of the holes or inside the holes;

2. The fine particle-disposed film as described in claim 1, wherein the surfaces of the fine particles are exposed at both front and back sides of the film.

3. The fine particle-disposed film as described in claim 1 or 2, wherein the fine particle is a spherical particle having:

an average particle diameter of 20 to 150 μ

m;

an aspect ratio of less than 1.1; and

a CV value of 2% or less.

4. The fine particle-disposed film as described in claim 1, 2 or 3, wherein a core of the fine particle is a high-molecular-weight material.

5. The fine particle-disposed film as described in claim 1, 2, 3 or 4, wherein the fine particle has:

K value of 400 to 15000 N/mm²;

a recovery rate of 5% or more; and

a coefficient of linear expansion at normal temperature of 10 to 200 ppm.

6. The fine particle-disposed film as described in claim 1, 2, 3, 4 or 5, wherein the fine particle has:

K value of 2000 to 8000 N/mm²;

a recovery rate of 50% or more; and

coefficient of linear expansion at normal temperature of 30 to 100 ppm.

7. The fine particle-disposed film as described in claim 1, 2, 3, 4, 5 or 6, wherein the fine particle has a metal coating layer.

8. The fine particle-disposed film as described in claim 7, wherein the thickness of the metal coating layer is 0.3 μ

m or more.

9. The fine particle-disposed film as described in claim 7 or 8, wherein the metal includes nickel or gold.

10. The fine particle-disposed film as described in claim 1, 2, 3, 4, 5, 6, 7, 8 or 9, wherein the fine particle has a resistance value of 3 Ω

or less.

11. The fine particle-disposed film as described in claim 1, 2, 3, 4, 5, 6, 7, 8, 9 or 10, wherein the fine particle has a resistance value of 0.05 Ω

or less.

12. The fine particle-disposed film as described in claim 1, 2, 3, 4, 5, 6, 7, 8, 9, 10 or 11, wherein the thickness of the film is ½

to 2 times of the average particle diameter of the fine particle.

13. The fine particle-disposed film as described in claim 1, 2, 3, 4, 5, 6, 7, 8, 9, 10, 11 or 12, wherein the thickness of the film is ¾

to 1.3 times of the average particle diameter of the fine particle.

14. The fine particle-disposed film as described in claim 1, 2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12 or 13, wherein a Young'"'"'s modulus of a surface of the film is 10 GPa or less.

15. The fine particle-disposed film as described in claim 1, 2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13 or 14, wherein the film become adhesive by pressing or heating.

16. The fine particle-disposed film as described in claim 1, 2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14 or 15, wherein the film is cured by heating or UV irradiation.

17. The fine particle-disposed film as described in claim 1, 2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15 or 16, wherein a coefficient of linear expansion after curing of the film is 10 to 200 ppm.

18. The fine particle-disposed film as described in claim 1, 2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16 or 17, wherein the average hole diameter in the front side of the hole is ⅘

to 1.3 times of the average particle diameter of the fine particle, the CV value of the hole is 5% or less, and the aspect ratio of the hole is less than 1.3.

19. The fine particle-disposed film as described in claim 1, 2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17 or 18, wherein the hole is tapered or step-wise in the thickness direction.

20. The fine particle-disposed film as described in claim 1, 2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18 or 19, wherein the average hole diameter in the back side of the film is not more than the average hole diameter in the front side of the film, and is 50% or more of the average hole diameter in the front side of the film.

21. The fine particle-disposed film as described in claim 1, 2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19 or 20, wherein the average hole diameter in the back side of the film is not more than the average hole diameter in the front side of the film, and is 80% or more of the average hole diameter in the front side of the film.

22. The fine particle-disposed film as described in claim 1, 2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20 or 21, wherein a processing for making the hole is performed by a laser.

23. A conductively connecting film that is the fine particle-disposed film as described in claim 1, 2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21 or 22, wherein the fine particles are conductive fine particles.

24. A conductively connected structure, wherein a connection is performed by using the conductively connecting film as described in claim 23.

25. A method for disposing fine particles, in which the fine particles are disposed in a film as the fine particle-disposed film as described in claim 1, 2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21 or 22,

wherein the fine particles are sucked from the back side of the film, the back side having substantially no tack on the surface.

26. The method for disposing fine particles as described in claim 25, wherein the suction of the fine particles is carried out by a suction of gas,

when the average particle diameter of the fine particles is 800 to 200 μ

m, a degree of vacuum in the suction side is −

10 kPa or less,

when the average particle diameter of the fine particles is 200 to 40 μ

m, a degree of vacuum in the suction side is −

20 kPa or less, and

when the average particle diameter of the fine particles is less than 40 μ

m, a degree of vacuum in the suction side is −

30 kPa or less.

27. The method for disposing fine particles as described in claim 25 or 26, wherein a support plate is provided at a suction opening when the fine particles are sucked in.

28. The method for disposing fine particles as described in claim 25, 26, or 27, which comprises a step of removing extra adhering particles by an air purge or brush.

29. The method for disposing fine particles as described in claim 25, 26, 27 or 28, which comprises a step of pressing the fine particle-disposed film.

30. The method for disposing fine particles as described in claim 25, 26, 27, 28 or 29, wherein a center of gravity of the fine particle resides inside the film.

31. The method for disposing fine particles as described in claim 25, 26, 27, 28, 29 or 30, wherein the fine particles are disposed with electricity being removed.