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Plasma immersion ion implantation apparatus including a plasma source having low dissociation and low minimum plasma voltage

  • US 20040107906A1
  • Filed: 08/22/2003
  • Published: 06/10/2004
  • Est. Priority Date: 08/11/2000
  • Status: Active Grant
First Claim
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1. A plasma immersion ion implantation reactor for ion implanting a species into a surface layer of a workpiece, comprising:

  • an enclosure comprising a side wall and a ceiling and defining a chamber;

    a workpiece support pedestal within the chamber having a workpiece support surface facing said ceiling and defining a process region extending generally across said wafer support pedestal and confined laterally by said side wall and axially between said workpiece support pedestal and said ceiling;

    said enclosure having at least a first pair of openings at generally opposite sides of said process region;

    a first hollow conduit outside of said chamber having first and second ends connected to respective ones of said first pair of openings, so as to provide a first reentrant path extending through said conduit and across said process region;

    gas distribution apparatus on or near an interior surface of said reactor for introducing a process gas containing the species to be ion implanted;

    a first RF plasma source power applicator for generating a plasma in said chamber.

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