Plasma immersion ion implantation apparatus including an inductively coupled plasma source having low dissociation and low minimum plasma voltage
First Claim
1. A plasma immersion ion implantation reactor for implanting a species into a workpiece, comprising:
- an enclosure comprising a side wall and a ceiling defining a chamber;
a workpiece support pedestal within the chamber for supporting a workpiece having a surface layer into which said species are to be ion implanted, said workpiece support pedestal facing an interior surface of said ceiling so as to define therebetween a process region extending generally across the diameter of said wafer support pedestal;
a source power applicator;
an RF plasma source power generator coupled to said source power applicator for inductively coupling RF source power into said chamber;
gas distribution apparatus for furnishing process gas into said chamber;
a supply of process gas for furnishing to said gas distribution devices a process gas containing said species; and
an RF bias generator connected to said workpiece support pedestal and having an RF bias frequency for establishing an RF bias.
1 Assignment
0 Petitions
Accused Products
Abstract
A plasma immersion ion implantation reactor for implanting a species into a workpiece includes an enclosure having a side wall and a ceiling defining a chamber, and a workpiece support pedestal within the chamber for supporting a workpiece having a surface layer into which the species are to be ion implanted, the workpiece support pedestal facing an interior surface of the ceiling so as to define therebetween a process region extending generally across the diameter of the wafer support pedestal. The reactor further comprises a source power applicator and an RF plasma source generator coupled to the source power applicator for inductively coupling RF source power into the chamber. A gas distribution apparatus furnishes process gas into the chamber, and a supply of process gas furnishes to the gas distribution apparatus a process gas containing the species. An RF bias generator is connected to the workpiece support pedestal and has an RF bias frequency for establishing an RF bias.
-
Citations
58 Claims
-
1. A plasma immersion ion implantation reactor for implanting a species into a workpiece, comprising:
-
an enclosure comprising a side wall and a ceiling defining a chamber;
a workpiece support pedestal within the chamber for supporting a workpiece having a surface layer into which said species are to be ion implanted, said workpiece support pedestal facing an interior surface of said ceiling so as to define therebetween a process region extending generally across the diameter of said wafer support pedestal;
a source power applicator;
an RF plasma source power generator coupled to said source power applicator for inductively coupling RF source power into said chamber;
gas distribution apparatus for furnishing process gas into said chamber;
a supply of process gas for furnishing to said gas distribution devices a process gas containing said species; and
an RF bias generator connected to said workpiece support pedestal and having an RF bias frequency for establishing an RF bias. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 28, 29, 30, 31, 32, 33, 34, 35, 36, 37, 38, 39, 40, 41, 42, 43, 44, 45, 46, 47, 48, 49, 50, 51, 52, 53, 54, 55, 56, 57, 58)
-
Specification