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Trench DMOS device with improved drain contact

  • US 20040108554A1
  • Filed: 12/01/2003
  • Published: 06/10/2004
  • Est. Priority Date: 10/30/2001
  • Status: Active Grant
First Claim
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1. A trench DMOS transistor device comprising:

  • a substrate of a first conductivity type, said substrate acting as a common drain region for said device;

    an epitaxial layer of said first conductivity type over said substrate, said epitaxial layer having a lower majority carrier concentration than said substrate;

    a trench extending into said epitaxial layer from an upper surface of said epitaxial layer;

    an insulating layer lining at least a portion of said trench;

    a conductive region within said trench adjacent said insulating layer;

    a body region of a second conductivity type provided within an upper portion of said epitaxial layer and adjacent said trench;

    a source region of said first conductivity type within an upper portion of said body region and adjacent said trench; and

    a low resistivity deep region extending into said device from an upper surface of said epitaxial layer, said low resistivity deep region acting to provide electrical contact with said substrate.

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