Trench DMOS device with improved drain contact
First Claim
1. A trench DMOS transistor device comprising:
- a substrate of a first conductivity type, said substrate acting as a common drain region for said device;
an epitaxial layer of said first conductivity type over said substrate, said epitaxial layer having a lower majority carrier concentration than said substrate;
a trench extending into said epitaxial layer from an upper surface of said epitaxial layer;
an insulating layer lining at least a portion of said trench;
a conductive region within said trench adjacent said insulating layer;
a body region of a second conductivity type provided within an upper portion of said epitaxial layer and adjacent said trench;
a source region of said first conductivity type within an upper portion of said body region and adjacent said trench; and
a low resistivity deep region extending into said device from an upper surface of said epitaxial layer, said low resistivity deep region acting to provide electrical contact with said substrate.
0 Assignments
0 Petitions
Accused Products
Abstract
A trench DMOS transistor device that comprises: (a) a substrate of a first conductivity type; (b) an epitaxial layer of first conductivity type over the substrate, wherein the epitaxial layer has a lower majority carrier concentration than the substrate; (c) a trench extending into the epitaxial layer from an upper surface of the epitaxial layer; (d) an insulating layer lining at least a portion of the trench; (e) a conductive region within the trench adjacent the insulating layer; (f) a body region of a second conductivity type provided within an upper portion of the epitaxial layer and adjacent the trench; (g) a source region of first conductivity type within an upper portion of the body region and adjacent the trench; and (h) one or more low resistivity deep regions extending into the device from an upper surface of the epitaxial layer. The low resistivity deep region acts to provide electrical contact with the substrate, which is a common drain region for the device. By constructing a trench DMOS transistor device in this fashion, source, drain and gate contacts can all be provided on a single surface of the device.
-
Citations
30 Claims
-
1. A trench DMOS transistor device comprising:
-
a substrate of a first conductivity type, said substrate acting as a common drain region for said device;
an epitaxial layer of said first conductivity type over said substrate, said epitaxial layer having a lower majority carrier concentration than said substrate;
a trench extending into said epitaxial layer from an upper surface of said epitaxial layer;
an insulating layer lining at least a portion of said trench;
a conductive region within said trench adjacent said insulating layer;
a body region of a second conductivity type provided within an upper portion of said epitaxial layer and adjacent said trench;
a source region of said first conductivity type within an upper portion of said body region and adjacent said trench; and
a low resistivity deep region extending into said device from an upper surface of said epitaxial layer, said low resistivity deep region acting to provide electrical contact with said substrate. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17)
-
-
18. A trench DMOS transistor device comprising:
-
a silicon substrate of N-type conductivity, said substrate acting as a drain region for said device;
a silicon epitaxial layer of said N-type conductivity type over said substrate, said epitaxial layer having a lower majority carrier concentration than said substrate;
a trench extending into said epitaxial layer from an upper surface of said epitaxial layer;
a silicon oxide insulating layer lining at least a portion of said trench;
a doped polycrystalline silicon conductive region within said trench adjacent said insulating layer;
a body region of P-type conductivity provided within an upper portion of said epitaxial layer and adjacent said trench;
a source region of N-type conductivity provided within an upper portion of said body region and adjacent said trench; and
a low resistivity deep region extending into said device from an upper surface of said epitaxial layer to said substrate, said trench DMOS transistor device comprising a plurality of transistor cells provided with a common source contact, a common drain contact and a common gate contact, each provided on a top surface of said device. - View Dependent Claims (19, 20, 21, 22, 23)
-
-
24. A method of forming a trench DMOS transistor device comprising:
-
providing a substrate of a first conductivity type, said substrate acting as a common drain region for said device;
depositing an epitaxial layer of said first conductivity type over said substrate, said epitaxial layer having a lower majority carrier concentration than said substrate;
forming a body region of a second conductivity type within an upper portion of said epitaxial layer;
etching a trench extending into said epitaxial layer from an upper surface of said epitaxial layer;
forming an insulating layer lining at least a portion of said trench;
forming a conductive region within said trench adjacent said insulating layer;
forming a source region of said first conductivity type within an upper portion of said body region and adjacent said trench; and
forming a low resistivity deep region extending into said device from an upper surface of said epitaxial layer, said deep region acting to provide electrical contact with said substrate. - View Dependent Claims (25, 26, 27, 28, 29, 30)
-
Specification