In-plane switching mode liquid crystal display device and method of fabricating the same

• US 20040109121A1
• Filed: 07/01/2003
• Published: 06/10/2004
• Est. Priority Date: 12/10/2002
• Status: Active Grant

• Current Assignee: LG Display Co., Ltd.
• Original Assignee: LG Philips LCD Company Limited (LG Display Co., Ltd.)
• Inventors: Lee, Jung-Il, Kim, Min-Joo, Cho, Yong-Jin
• Granted Patent: US 7,365,819 B2
• Time in Patent Office: Days
• US Class Current: 349/141
• CPC Class Codes: G02F 1/134363 for applying an electric field parallel to the substrate, i.e. in-plane switching [IPS]
• CPC Class Codes: G02F 1/136213 Storage capacitors associated with the pixel electrode

Abstract

An in-plane switching mode liquid crystal display device includes a plurality of gate lines and data lines defining a plurality of pixel regions, a driving device disposed within each of the pixel regions, at least one first electrode having a first width and at least one second electrode having a second width both arranged within the pixel region, and at least one third electrode having a third width overlapping at least one of the first and second electrodes to form a storage capacitor.

Claims

1. An in-plane switching mode liquid crystal display device, comprising:

a plurality of gate lines and data lines defining a plurality of pixel regions;

a driving device disposed within each of the pixel regions;

at least one first electrode having a first width and at least one second electrode having a second width both arranged within the pixel region; and

at least one third electrode having a third width overlapping at least one of the first and second electrodes to form a storage capacitor.

2. The device according to claim 1, wherein the third width of the third electrode is equal to the second width of the second electrode.

3. The device according to claim 1, wherein the third width of the third electrode is smaller than the second width of the second electrode.

4. The device according to claim 1, wherein the driving device includes a thin film transistor.

5. The device according to claim 4, wherein the thin film transistor comprises:

a gate electrode on a surface of a first substrate;

an insulating layer over the first substrate;

a semiconductor layer on the insulating layer;

a source electrode and a drain electrode on the semiconductor layer; and

a passivation layer over the first substrate.

6. The device according to claim 5, wherein the third electrode is disposed on the surface of the first substrate.

7. The device according to claim 5, wherein the first electrode is disposed on the passivation layer.

8. The device according to claim 5, wherein the second electrode is disposed on the insulating layer.

9. The device according to claim 5, wherein the second electrode is disposed on the passivation layer.

10. The device according to claim 9, further comprising a fourth electrode having a fourth width on the gate insulating layer and connected to the second electrode through a contact hole formed in the passivation layer for creating a storage capacitor with the third electrode.

11. The device according to claim 1, further comprising a metal line electrically connected to the first electrode and overlapping the gate line for creating the storage capacitor.

12. An in-plane switching mode liquid crystal device, comprising:

a plurality of gate lines and data lines defining a plurality of pixel regions;

a driving device disposed with each of the pixel regions;

at least a pair of electrodes arranged within each of the pixel regions for generating a horizontal electric field; and

at least one storage capacitor electrode having a first width overlapping at least one electrode between the pair of electrodes for forming a storage capacitor.

13. The device according to claim 12, wherein the pair of electrodes includes a common electrode having a second width and a pixel electrode having a third width arranged substantially parallel to the common electrode.

14. The device according to claim 13, wherein the storage capacitor electrode overlaps the pixel electrode.

15. The device according to claim 14, wherein the first width of the storage capacitor electrode is substantially equal to the third width of the pixel electrode.

16. The device according to claim 14, wherein the first width of the storage capacitor electrode is smaller than the third width of the pixel electrode.

17. A method of fabricating an in-plane switching mode liquid crystal display device, comprising:

forming a plurality of gate lines and data lines on a first substrate to define a plurality of pixel regions;

forming a driving device disposed within each of the pixel regions;

forming at least one first electrode having a first width and at least one second electrode having a second width within the pixel region; and

forming at least one third electrode having a third width to overlap at least one of the first and second electrodes to form a storage capacitor.

18. The method according to claim 17, wherein a third width of the third electrode is equal to the second width of the second electrode.

19. The method according to claim 17, wherein the third width of the third electrode is smaller than the second width of the second electrode.

20. The method according to claim 17, wherein the driving device includes a thin film transistor having:

a gate electrode on a surface of a first substrate;

an insulating layer over the first substrate;

a semiconductor layer on the insulating layer;

a source electrode and a drain electrode on the semiconductor layer; and

a passivation layer over the first substrate.

21. The method according to claim 20, wherein the third electrode is disposed on the surface of the first substrate.

22. The method according to claim 20, wherein the first electrode is disposed on the passivation layer.

23. The method according to claim 20, wherein the second electrode is disposed on the insulating layer.

24. The method according to claim 20, wherein the second electrode is disposed on the passivation layer.

25. The method according to claim 24, further comprising forming a fourth electrode having a fourth width on the gate insulating layer to be electrically connected to the second electrode through a contact hole formed in the passivation layer for creating a storage capacitor with the third electrode.

26. The method according to claim 17, further comprising forming a metal line electrically connected to the first electrode to overlap the gate line for creating the storage capacitor.

27. A method of fabricating an in-plane switching mode liquid crystal device, comprising:

forming a plurality of gate lines and data lines to define a plurality of pixel regions;

forming a driving device disposed with each of the pixel regions;

forming at least a pair of electrodes arranged within each of the pixel regions for generating a horizontal electric field; and

forming at least one storage capacitor electrode having a first width to overlap at least one electrode between the pair of electrodes for forming a storage capacitor.

28. The method according to claim 27, wherein the pair of electrodes includes a common electrode having a second width and a pixel electrode having a third width arranged substantially parallel to the common electrode.

29. The method according to claim 28, wherein the storage capacitor electrode overlaps the pixel electrode.

30. The method according to claim 29, wherein the first width of the storage capacitor electrode is substantially equal to the third width of the pixel electrode.

31. The method according to claim 29, wherein the first width of the storage capacitor electrode is smaller than the third width of the pixel electrode.