Method and device for photo-electrochemically etching a semiconductor sample, especially gallium nitride
First Claim
1. A method for photo-electrochemically etching a semiconductor sample, comprising the steps of:
- bringing a semiconductor sample in contact with an electrolyte liquid, thereby forming a contact area, irradiating the contact area of the semiconductor sample through the electrolyte liquid with UV light, thereby generating a photo current, measuring the photo current, and repeatedly subjecting the contact area to a jet of fresh electrolyte liquid.
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Abstract
In a method for photo-electrochemical etching of a semiconductor sample, the semiconductor sample is brought in contact with an electrolyte liquid. The contact area formed thereby is illuminated through the electrolyte liquid with UV light. The photo-current created by UV light irradiation at the contact area is measured. To increase the etching quality, a jet of fresh electrolyte liquid is repeatedly applied to the contact area. A device for carrying out the method includes a container to be filled with an electrolyte liquid, a UV source for illuminating the semiconductor sample with UV light through the electrolyte liquid, and a measuring instrument for measuring the photo-current created during UV light irradiation of the contact area. Further provided are an inlet for supplying fresh electrolyte liquid, directed towards the semiconductor sample, and a device attached to the inlet for repeated production of electrolyte fluid jets, directed towards the semiconductor sample.
6 Citations
38 Claims
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1. A method for photo-electrochemically etching a semiconductor sample, comprising the steps of:
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bringing a semiconductor sample in contact with an electrolyte liquid, thereby forming a contact area, irradiating the contact area of the semiconductor sample through the electrolyte liquid with UV light, thereby generating a photo current, measuring the photo current, and repeatedly subjecting the contact area to a jet of fresh electrolyte liquid. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13)
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14. A device for photo-electrochemically etching a semiconductor sample, preferably made of gallium nitride, comprising:
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a container to be filled with an electrolyte liquid, a UV light source for illuminating a semiconductor sample with UV light through the electrolyte liquid, means for measuring a photo-current (I) that is generated when said contact area is illuminated with the UV light, an inlet for supplying fresh electrolyte liquid, said inlet being directed towards the semiconductor sample, and an apparatus connected to the inlet for repeatedly creating electrolyte liquid jets, which are directed towards the semiconductor sample. - View Dependent Claims (15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 28, 29, 30, 31, 32, 33, 34, 35, 36, 37, 38)
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Specification