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Method and device for photo-electrochemically etching a semiconductor sample, especially gallium nitride

  • US 20040110386A1
  • Filed: 10/24/2003
  • Published: 06/10/2004
  • Est. Priority Date: 12/04/2002
  • Status: Active Grant
First Claim
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1. A method for photo-electrochemically etching a semiconductor sample, comprising the steps of:

  • bringing a semiconductor sample in contact with an electrolyte liquid, thereby forming a contact area, irradiating the contact area of the semiconductor sample through the electrolyte liquid with UV light, thereby generating a photo current, measuring the photo current, and repeatedly subjecting the contact area to a jet of fresh electrolyte liquid.

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