Fluoride in supercritical fluid for photoresist and residue removal
First Claim
22. A system for cleaning a substrate, the system comprising a chamber for generating a supercritical solution comprising:
- a. supercritical CO2;
b. an amine comprising at least one organo group; and
c. hydrogen fluoride, wherein the at least a portion of the hydrogen fluoride and the amine form an ammonium fluoride adduct.
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Accused Products
Abstract
A method and system for removing a residue from a substrate material is disclosed. The method and system utilize a supercritical cleaning solution with an fluoride source to control the concentration of fluoride ions and/or hydrogen fluoride within the supercritical cleaning solution. Preferably, the method and the system utilize a supercritical cleaning solution with supercritical CO2 and an ammonium fluoride salt and/or an organo-ammonium fluoride and/or amine adduct. The supercritical cleaning solution, in accordance with further embodiments, includes one or more acids and one or more carrier solvents. The supercritical cleaning solution of the present invention is capable of removing a residue, such a post-etch photo polymer residue from a semiconductor substrate material by dissolution of the reside, etching a portion of the residue, etching a portion of the substrate material or any combination thereof.
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Citations
32 Claims
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22. A system for cleaning a substrate, the system comprising a chamber for generating a supercritical solution comprising:
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a. supercritical CO2;
b. an amine comprising at least one organo group; and
c. hydrogen fluoride, wherein the at least a portion of the hydrogen fluoride and the amine form an ammonium fluoride adduct. - View Dependent Claims (23, 24, 25, 26, 27)
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28. A method of cleaning a substrate comprising:
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a. generating a supercritical cleaning solution in the presence of the substrate, the supercritical solution comprising supercritical CO2 and fluoride source;
b. circulating the supercritical cleaning solution; and
c. removing the supercritical cleaning solution. - View Dependent Claims (1, 2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 29, 30, 31, 32)
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32-1. The method of claim 28, wherein the cleaning solution is substantially anhydrous.
Specification