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Plasma immersion ion implantation apparatus including a capacitively coupled plasma source having low dissociation and low minimum plasma voltage

  • US 20040112542A1
  • Filed: 08/22/2003
  • Published: 06/17/2004
  • Est. Priority Date: 06/05/2002
  • Status: Abandoned Application
First Claim
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1. A plasma immersion ion implantation reactor for implanting a species into a workpiece, comprising:

  • an enclosure comprising a side wall and a ceiling defining a chamber;

    a workpiece support pedestal within the chamber for supporting a workpiece having a surface layer into which said species are to be ion implanted, said workpiece support pedestal facing an interior surface of said ceiling so as to define therebetween a process region extending generally across the diameter of said wafer support pedestal;

    an RF plasma source power generator connected across said ceiling or said sidewall and said workpiece support pedestal for capacitively coupling RF source power into said chamber;

    gas distribution apparatus for furnishing process gas into said chamber;

    a supply of process gas for furnishing to said gas distribution devices a process gas containing said species; and

    an RF bias generator connected to said workpiece support pedestal and having an RF bias frequency for establishing an RF bias.

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