Infrared thermopile detector system for semiconductor process monitoring and control

• US 20040113080A1
• Filed: 12/09/2003
• Published: 06/17/2004
• Est. Priority Date: 05/08/2002
• Status: Active Grant

• Current Assignee: Entegris Incorporated
• Original Assignee: Jose Arno
• Inventors: Arno, Jose
• Granted Patent: US 7,172,918 B2
• Time in Patent Office: Days
• US Class Current: 250/343
• CPC Class Codes: G01J 5/0007 of wafers or semiconductor substrates, e.g. using Rapid Thermal Processing
• CPC Class Codes: G01J 5/0014 for sensing the radiation from gases, flames
• CPC Class Codes: G01J 5/025 Interfacing a pyrometer to an external device or network; User interface
• CPC Class Codes: G01J 5/12 using thermoelectric elements, e.g. thermocouples
• CPC Class Codes: G01N 21/3504 for analysing gases, e.g. multi-gas analysis
• CPC Class Codes: H01L 21/67253 Process monitoring, e.g. flow or thickness monitoring
• CPC Class Codes: Y10T 483/16 with means to transfer work

Abstract

A thermopile-based detector for monitoring and/or controlling semiconductor processes, and a method of monitoring and/or controlling semiconductor processes using thermopile-based sensing of conditions in and/or affecting such processes.

Claims

1. A semiconductor process system adapted for processing of or with a material therein, said system comprising:

a sampling region for the material;

an infrared radiation source constructed and arranged to transmit infrared radiation through the sampling region;

a thermopile detector constructed and arranged to receive infrared radiation after the transmission thereof through the sampling region and to responsively generate an output signal correlative of said material; and

process control means arranged to receive the output of the thermopile detector and to responsively control one or more process conditions in and/or affecting the semiconductor process system.

2. The semiconductor process system of claim 1, wherein the material comprises a solid.

3. The semiconductor process system of claim 1, wherein the material comprises a fluid.

4. The semiconductor process system of claim 1, wherein the material comprises a liquid.

5. The semiconductor process system of claim 1, wherein the material comprises a gas.