Semiconductor light emitting device and method for fabricating the same
First Claim
1. A semiconductor light emitting device comprising:
- a semiconductor multilayer structure comprising a plurality of Group III-V nitride semiconductor layers including two semiconductor layers of different conductivity types, and a transparent electrode formed on the semiconductor multilayer structure, wherein the transparent electrode contains an impurity element developing the same conductivity type as that of an impurity element introduced into a semiconductor in the semiconductor multilayer structure, said semiconductor having an interface with the transparent electrode.
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Accused Products
Abstract
A semiconductor light emitting device includes a semiconductor multilayer structure comprising a plurality of Group III-V nitride semiconductor layers including two semiconductor layers of different conductivity types, and a transparent electrode formed on the semiconductor multilayer structure. The transparent electrode contains an impurity element developing the same conductivity type as that of an impurity element introduced into a semiconductor in the semiconductor multilayer structure, which semiconductor has an interface with the transparent electrode. Therefore, contact resistance between the transparent electrode and the semiconductor having the interface with the transparent electrode is decreased.
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Citations
37 Claims
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1. A semiconductor light emitting device comprising:
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a semiconductor multilayer structure comprising a plurality of Group III-V nitride semiconductor layers including two semiconductor layers of different conductivity types, and a transparent electrode formed on the semiconductor multilayer structure, wherein the transparent electrode contains an impurity element developing the same conductivity type as that of an impurity element introduced into a semiconductor in the semiconductor multilayer structure, said semiconductor having an interface with the transparent electrode. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A semiconductor light emitting device comprising:
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a semiconductor multilayer structure comprising a plurality of Group III-V nitride semiconductor layers including two semiconductor layers of different conductivity types, and a transparent electrode formed on the semiconductor multilayer structure, wherein the transparent electrode contains a metal element that adsorbs hydrogen. - View Dependent Claims (9, 10, 11, 12, 13, 14)
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15. A semiconductor light emitting device comprising:
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a semiconductor multilayer structure comprising a plurality of Group III-V nitride semiconductor layers including two semiconductor layers of different conductivity types, and a passivation film formed on the semiconductor multilayer structure, wherein the passivation film contains an impurity element developing the same conductivity type as that of an impurity element introduced into a semiconductor in the semiconductor multilayer structure, said semiconductor having an interface with the passivation film. - View Dependent Claims (16, 17, 18, 19, 20, 21, 22)
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23. A semiconductor light emitting device comprising:
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a semiconductor multilayer structure comprising a plurality of Group III-V nitride semiconductor layers including two semiconductor layers of different conductivity types, and a passivation film formed on the semiconductor multilayer structure, wherein the passivation film contains a metal element that adsorbs hydrogen. - View Dependent Claims (24, 25, 26, 27, 28, 29, 30)
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31. A method for fabricating a semiconductor light emitting device, comprising the steps of:
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forming, on a substrate, a semiconductor multilayer structure comprising a plurality of Group III-V nitride semiconductor layers including two semiconductor layers of different conductivity types; and
forming a transparent electrode on an electrode-formation face of the semiconductor multilayer structure by using material that contains an impurity element developing the same conductivity type as that of an impurity element introduced into a semiconductor having the electrode-formation face, and then heat-treating the transparent electrode. - View Dependent Claims (32, 33)
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34. A method for fabricating a semiconductor light emitting device, comprising the steps of:
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forming, on a substrate, a semiconductor multilayer structure comprising a plurality of Group III-V nitride semiconductor layers including two semiconductor layers of different conductivity types; and
forming a transparent electrode on the semiconductor multilayer structure by using material that contains a metal element that adsorbs hydrogen, and then heat-treating the transparent electrode. - View Dependent Claims (35, 36)
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37. A method for fabricating a semiconductor light emitting device, comprising the steps of:
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forming, on a substrate, a semiconductor multilayer structure comprising a plurality of Group III-V nitride semiconductor layers including two semiconductor layers of different conductivity types;
forming a first electrode made of metal on the semiconductor multilayer structure;
removing the substrate from the semiconductor multilayer structure; and
forming a transparent electrode on a second-electrode-formation face of the semiconductor multilayer structure by using material that contains an impurity element developing the same conductivity type as that of an impurity element introduced into a semiconductor having the second-electrode-formation face, wherein the second-electrode-formation face opposes the first electrode, and then heat-treating the transparent electrode.
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Specification