×

Semiconductor light emitting device and method for fabricating the same

  • US 20040113156A1
  • Filed: 11/21/2003
  • Published: 06/17/2004
  • Est. Priority Date: 11/27/2002
  • Status: Active Grant
First Claim
Patent Images

1. A semiconductor light emitting device comprising:

  • a semiconductor multilayer structure comprising a plurality of Group III-V nitride semiconductor layers including two semiconductor layers of different conductivity types, and a transparent electrode formed on the semiconductor multilayer structure, wherein the transparent electrode contains an impurity element developing the same conductivity type as that of an impurity element introduced into a semiconductor in the semiconductor multilayer structure, said semiconductor having an interface with the transparent electrode.

View all claims
  • 1 Assignment
Timeline View
Assignment View
    ×
    ×