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Trench MOSFET device with improved on-resistance

  • US 20040113203A1
  • Filed: 12/01/2003
  • Published: 06/17/2004
  • Est. Priority Date: 11/21/2001
  • Status: Active Grant
First Claim
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1. A trench MOSFET device comprising:

  • a substrate of a first conductivity type;

    an epitaxial layer of said first conductivity type over said substrate, said epitaxial layer having a lower majority carrier concentration than said substrate;

    a trench extending into said epitaxial region from an upper surface of said epitaxial layer;

    an insulating layer lining at least a portion of said trench;

    a conductive region within said trench adjacent said insulating layer;

    a doped region of said first conductivity type formed within said epitaxial layer between a bottom portion of said trench and said substrate, said doped region having a majority carrier concentration that is lower than that of said substrate and higher than that of said epitaxial layer;

    a body region of a second conductivity type formed within an upper portion of said epitaxial layer and adjacent said trench, said body region extending to a lesser depth from said upper surface of said epitaxial layer than does said trench; and

    a source region of said first conductivity type formed within an upper portion of said body region and adjacent said trench.

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