Power metal oxide semiconductor field effect transistor layout

• US 20040113205A1
• Filed: 09/22/2003
• Published: 06/17/2004
• Est. Priority Date: 11/07/2002
• Status: Active Grant

• Current Assignee: ProMOS Technologies, Inc.
• Original Assignee: Mosel Vitelic Incorporated
• Inventors: Chen, Jen-Te, Ni, Cheng-Tsung
• Granted Patent: US 6,888,197 B2
• Time in Patent Office: Days
• US Class Current: 257/341
• CPC Class Codes: H01L 29/0696 of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
• CPC Class Codes: H01L 29/7813 with trench gate electrode, e.g. UMOS transistors trench gate electrodes per se H01L29/4236

Abstract

A power MOSFET layout according to one embodiment of the invention comprises a substrate and a plurality of cells. Each of the cells includes a base portion, a plurality of protruding portions extending from the base portion, and a plurality of photo-resist regions. Each of the cells is geometrically configured with the base portion and the plurality of protruding portions defining a closed cell boundary enclosing each of said cells. The cells are formed over the substrate, and the closed cell boundaries of the cells are arranged regularly with each other with no overlapping among the cells. The base portions are disposed in a matrix arrangement having rows and columns. The base portions are oriented from end to end in a direction of the columns and the protruding portions extend from the base portions along a direction of the rows. The photo-resist regions cover the base portions on the same column. None of the protruding portions are disposed between the base portions on the same column. The cells are doped with N type dopants by using the photo-resist regions as masks.

Claims

1. A power metal oxide semiconductor field effect transistor (MOSFET) layout comprising:

a substrate;

a plurality of cells, each of said cells including;

a base portion;

a plurality of protruding portions extending from the base portion, each of said cells being geometrically configured with the base portion and the plurality of protruding portions defining a closed cell boundary enclosing each of said cells; and

a plurality of photo-resist regions;

wherein the cells are formed over the substrate, and the closed cell boundaries of the cells are arranged regularly with each other with no overlapping among the cells;

wherein the base portions are disposed in a matrix arrangement having rows and columns, the base portions being oriented from end to end in a direction of the columns and the protruding portions extending from the base portions along a direction of the rows;

wherein the photo-resist regions cover the base portions on the same column; and

wherein none of the protruding portions are disposed between the base portions on the same column; and

wherein the cells are doped with N type dopants by using the photo-resist regions as masks.

2. The power MOSFET layout according to claim 1, wherein the plurality of protruding portions comprise a first protruding portion connected to one end of the base portion and a second protruding portion connected to the other end of the base portion.

3. The power MOSFET layout according to claim 2, wherein the first protruding portion is connected to one side of the base portion and the second protruding portion is connected to the other side of the base portion.

4. The power MOSFET layout according to claim 2, wherein the first protruding portion and the second protruding portion both are connected to the same side of the base portion.

5. The power MOSFET layout according to claim 4, wherein every two base portions on the same row are in a group, none of the protruding portions is disposed between the base portions of the group, and the base portions of the same group on the same column are covered by the same photo-resist region.

6. The power MOSFET layout according to claim 5, wherein the base portions of the same group are connected to each other side by side.

7. The power MOSFET layout according to claim 2, wherein the first protruding portion and the second protruding portion respectively have an end part, the end part of the first protruding portion is at the end opposite to the end by which the first protruding portion connects to the base portion, and the end part of the second protruding portion is at the end opposite to the end by which the second protruding portion connects to the base portion, and each of the photo-resist regions further includes a plurality of branches so as to cover the corresponding end parts, such that each of the photo-resist regions covers the plurality of base portions of the same column as well as the corresponding end parts of the protruding portions.

8. The power MOSFET layout according to claim 7, wherein the end parts are cell body contact regions.

9. The power MOSFET layout according to claim 1, wherein the base portion is divided into a first zone, a second zone, and a third zone, the first zone is located on one side of the base portion, the second zone is located on the other side of the base portion, and the third zone is located between the first zone and the second zone;

wherein the plurality of the protruding portions are connected to one of the first zone and the second zone; and

wherein the photo-resist region covers a plurality of the third zones of the same column.

10. The power MOSFET layout according to claim 9, wherein the first protruding portion is coupled to the first zone of the base portion and the second protruding portion is coupled to the second zone of the base portion.

11. The power MOSFET layout according to claim 9, wherein the plurality of protruding portions are a first protruding portion, a second protruding portion, a third protruding portion, and a fourth protruding portion, the first protruding portion is coupled to one end of the base portion, the fourth protruding portion is coupled to the other end of the base portion, the second protruding portion and the third protruding portion are substantially aligned with the first protruding portion and the second protruding portion, respectively, in parallel and are coupled to the base portion.

12. The power MOSFET layout according to claim 11, wherein the first protruding portion and the third protruding portion are coupled to one side of the base portion;

and wherein the second protruding portion and the fourth protruding portion are coupled to the other side of the base portion.

13. The power MOSFET layout according to claim 9, wherein the protruding portions extend from one side of the base portion and into spaces formed by the protruding portions of the adjacent cells.

14. The power MOSFET layout according to claim 13, wherein a middle part is formed in the middle of each protruding portion, the middle parts of the protruding portions forming groups of middle parts, each group being aligned in a column disposed between adjacent columns of the base portions;

and wherein the layout further comprises a plurality of photo-resist regions covering the middle parts, belonging to the same column, of the protruding portions.

15. The power MOSFET layout according to claim 9, wherein an end part is formed at one end of the protruding portion not connecting with the base portion;

wherein two of the end parts belonging to the same row are grouped into a pair, the layout further comprises a plurality of second photo-resist regions, each of the second photo-resist regions covering the pairs of end parts of the same column; and

wherein none of the protruding portions are disposed between the pairs of end parts of the same column.

16. The power MOSFET layout according to claim 15, wherein the end parts are cell body contact regions.

17. The power MOSFET layout according to claim 15, wherein the protruding portions extend into spaces formed by the protruding portions belonging to the adjacent cells, the photo-resist regions further include a plurality of branches extending out from a side of the photo-resist regions located on the third zone to cover each one of the end parts without covering remaining parts of the protruding portions, so that each photo-resist region covers the cell body contact regions in the third zone belonging to the same column and end parts of the adjacent cells.

18. The power MOSFET layout according to claim 9, wherein the protruding portions comprise a first protruding portion, a second protruding portion, a third protruding portion, a fourth protruding portion, a fifth protruding portion, a sixth protruding portion, a seventh protruding portion, and an eighth protruding portion, wherein the first, the second, the third, and the fourth protruding portions are parallel and respectively coupled the first zone of the base portion, the fifth the sixth, the seventh, and the eighth protruding portions are parallel and respectively coupled with the second zone of the base portion.

19. The power MOSFET layout according to claim 18, wherein the first, the second, the third, the fourth, the fifth, the sixth, the seventh, and the eighth protruding portions respectively have end parts, wherein each two of the end parts of the adjacent cells belonging to the same row are grouped into a pair, none of the protruding portions are disposed between the pairs of end parts of the same column, and further the layout comprises a plurality of second photo-resist region, each of the second photo-resist region covers the pairs of end parts of the same column.

20. The power MOSFET layout according to claim 1, wherein the base portions are cell body contact regions and the protruding portions are source regions.

21. The power MOSFET layout according to claim 1, wherein the power MOSFET is a trenched field effect transistor.

22. The power MOSFET layout according to claim 1, wherein each of the protruding portions of each of the cells is proximally extended into the space separated by the protruding portions of the other adjacent cells.

23. A power metal oxide semiconductor field effect transistor (MOSFET) layout comprising:

a substrate;

a plurality of cells, each of said cells including a base portion and a plurality of protruding portions extending from the base portion;

wherein each of said cells is geometrically configured with the base portion and the plurality of protruding portions defining a closed cell boundary enclosing each of said cells;

wherein the cells are formed over the substrate, and the closed cell boundaries of the cells being geometrically arranged so that one cell does not overlay another cell on the substrate;

wherein the base portions are disposed in a matrix arrangement having rows and columns, the base portions being oriented from end to end in a direction of the columns and the protruding portions extending from the base portions along a direction of the rows;

wherein the base portions on the same column are configured to be covered by a photo-resist region; and

wherein none of the protruding portions are disposed between the base portions on the same column; and

wherein the cells are processed by using the photo-resist regions as masks.

24. The power MOSFET layout according to claim 23, wherein the plurality of protruding portions comprise a first protruding portion connected to one end of the base portion and a second protruding portion connected to the other end of the base portion.

25. The power MOSFET layout according to claim 23, wherein the base portion is divided into a first zone, a second zone, and a third zone, the first zone is located on one side of the base portion, the second zone is located on the other side of the base portion, and the third zone is located between the first zone and the second zone;

wherein the plurality of the protruding portions are connected to one of the first zone and the second zone; and

wherein the photo-resist region covers a plurality of the third zones of the same column.