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Dielectric film, its formation method, semiconductor device using the dielectric film and its production method

  • US 20040113227A1
  • Filed: 12/02/2003
  • Published: 06/17/2004
  • Est. Priority Date: 12/03/2002
  • Status: Abandoned Application
First Claim
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1. A dielectric film formed directly or indirectly on at least a part of a glass substrate or a plastic substrate, comprising silicon oxide in a part at least in the direction of the film thickness, the composition ratio of silicon and oxygen being between 1:

  • 1.94 and 1;

    2 both inclusive.

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