Semiconductor laser and method for manufacturing the same
First Claim
1. A semiconductor laser comprising:
- a first conductive type clad layer;
a light-emitting layer formed on the first conductive type clad layer and having an active layer made of AlvGa1-vAs (where 0≦
v<
x3) to emit light by current injection);
a second conductive type first clad layer formed on the light-emitting layer;
a second conductive type second clad layer formed in a stripe shape on a part of the second conductive type first clad layer;
a current-blocking layer formed in both sides of the second conductive type second clad layer and having a larger band gap than those of the second conductive type first and second clad layers; and
a second conductive type third clad layer made of Alx3Ga1-x3As (where 0.40≦
x3≦
0.46) formed on the second conductive type second clad layer and the current-blocking layer.
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Accused Products
Abstract
A high-output semiconductor laser of a real index-guided structure comprises: a first conductive type clad layer; active layer for emitting light by current injection; second conductive type first clad layer; second conductive type second clad layer as a ridge waveguide; current-blocking layer formed in both sides of the second conductive type second clad layer and having a larger band gap than those of the second conductive type first and second clad layers; and second conductive type third clad layer having a mobility enough to guide a current to the second conductive type second clad layer and prevent a flow of a leak current into the current-blocking layer.
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Citations
18 Claims
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1. A semiconductor laser comprising:
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a first conductive type clad layer;
a light-emitting layer formed on the first conductive type clad layer and having an active layer made of AlvGa1-vAs (where 0≦
v<
x3) to emit light by current injection);
a second conductive type first clad layer formed on the light-emitting layer;
a second conductive type second clad layer formed in a stripe shape on a part of the second conductive type first clad layer;
a current-blocking layer formed in both sides of the second conductive type second clad layer and having a larger band gap than those of the second conductive type first and second clad layers; and
a second conductive type third clad layer made of Alx3Ga1-x3As (where 0.40≦
x3≦
0.46) formed on the second conductive type second clad layer and the current-blocking layer. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A semiconductor laser comprising:
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a substrate made of GaAs of a first conductive type;
a first conductive type clad layer made of Alx0Ga1-x0As (where 0.40≦
xi≦
0.46, i=0, 1, 2,
3) formed on the substrate;
a light-emitting layer formed on the first conductive type clad layer and having an active layer made of AlvGa1-vAs (where 0≦
v≦
xi) to emit light by current injection);
a second conductive type first clad layer made of Alx1Ga1-x1As formed on the light-emitting layer;
a second conductive type second clad layer made of Alx2Ga1-x2As in a stripe shape formed on a part of the second conductive type first clad layer;
a current-blocking layer of the first conductive type made of AlyGa1-yAs (where 0.50≦
y≦
0.56) formed in both sides of second conductive type second clad layer;
a second conductive type third clad layer made of Alx3Ga1-x3As formed on the second conductive type second clad layer and the current-blocking layer;
a contact layer of the second conductive type formed on the second conductive type third clad layer and having a band gap smaller than that of the second conductive type third clad layer;
a first electrode formed in electrical connection with the substrate; and
a second electrode formed on the contact layer in electrical connection therewith. - View Dependent Claims (9, 10, 11, 12, 13)
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14. A method for manufacturing a semiconductor laser comprising:
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sequentially forming a first conductive type clad layer made of Alx0Ga1-x0As (where v≦
xi≦
y, i=0, 1, 2,
3), an active layer made of AlvGa1-vAs (where 0≦
v<
xi), a second conductive type first clad layer made of Alx1Ga1-x1As and an Alx2Ga1-x2As layer by MOCVD;
forming a stripe dielectric insulating film on the Alx2Ga1-x2As layer, and partly removing the Alx2Ga1-x2As layer by wet etching using the dielectric insulating film as a mask to form a stripe second conductive type second layer having (111)A planes exposed on side surfaces thereof;
sequentially forming a current-blocking layer made of AlyGa1-yAs of the first conductive type and a cap layer made of InGaP to sandwich the second conductive type second clad layer from opposite sides thereof by MOCVD using the dielectric film as a mask;
removing the dielectric film and the cap layer; and
forming a second conductive type third clad layer made of Alx3Ga1-x3As layer on the current-blocking layer and the second conductive type second clad layer by MOCVD.
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15. A semiconductor laser comprising:
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a first conductive type clad layer;
a light-emitting layer formed on the first conductive type clad layer and having an active layer for emitting light by current injection;
a second conductive type first clad layer formed on the light-emitting layer;
a second conductive type second clad layer formed in a stripe shape on a part of the second conductive type first clad layer;
a current-blocking layer formed in both sides of the second conductive type second clad layer and having a larger band gap than those of the second conductive type first and second clad layers;
a cap layer formed on the current-blocking layer, said cap layer having a band gap larger than that of the active layer and containing a group V element different from that of the current-blocking layer; and
a second conductive type third clad layer formed on the cap layer and the second conductive type second clad layer. - View Dependent Claims (16, 17, 18)
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Specification