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Method and apparatus for laser annealing

  • US 20040115931A1
  • Filed: 12/12/2002
  • Published: 06/17/2004
  • Est. Priority Date: 12/12/2002
  • Status: Active Grant
First Claim
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1. A method of forming a semiconductor device, comprising:

  • performing one or more annealing processes on one or more portions of the semiconductor device, wherein at least one of the annealing processes is varied for different portions of the semiconductor device, wherein the process is varied based at least in part on one or more desirable characteristics of the particular portion of the semiconductor device being annealed.

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