Bonding pad of a semiconductor device and formation method thereof

• US 20040115942A1
• Filed: 11/25/2003
• Published: 06/17/2004
• Est. Priority Date: 12/17/2002
• Status: Active Grant

• Current Assignee: DSS Technology Management, Inc. (Document Security Systems, Inc.)
• Original Assignee: DONGBU ELECTRONICS CO., LTD. (DB HiTek Co., Ltd.)
• Inventors: Lee, Date-Gun
• Granted Patent: US 6,995,082 B2
• Time in Patent Office: Days
• US Class Current: 438/690
• CPC Class Codes: H01L 2224/02166 Collar structures
• CPC Class Codes: H01L 2224/03009 for protecting parts during manufacture
• CPC Class Codes: H01L 2224/04042 Bonding areas specifically adapted for wire connectors, e.g. wirebond pads
• CPC Class Codes: H01L 2224/05073 Single internal layer
• CPC Class Codes: H01L 2224/05166 Titanium [Ti] as principal constituent
• CPC Class Codes: H01L 2224/05181 Tantalum [Ta] as principal constituent
• CPC Class Codes: H01L 2224/05187 Ceramics, e.g. crystalline carbides, nitrides or oxides
• CPC Class Codes: H01L 2224/05556 in side view
• CPC Class Codes: H01L 2224/05624 Aluminium [Al] as principal constituent
• CPC Class Codes: H01L 2224/05647 Copper [Cu] as principal constituent
• CPC Class Codes: H01L 2224/45099 Material
• CPC Class Codes: H01L 2224/451 with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
• CPC Class Codes: H01L 2224/45124 Aluminium (Al) as principal constituent
• CPC Class Codes: H01L 2224/4847 the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
• CPC Class Codes: H01L 2224/48724 Aluminium (Al) as principal constituent
• CPC Class Codes: H01L 2224/48747 Copper (Cu) as principal constituent
• CPC Class Codes: H01L 2224/48992 Reinforcing structures
• CPC Class Codes: H01L 2224/8592 Applying permanent coating, e.g. protective coating
• CPC Class Codes: H01L 24/03 Manufacturing methods
• CPC Class Codes: H01L 24/05 of an individual bonding area
• CPC Class Codes: H01L 24/45 : of an individual wire connector
• CPC Class Codes: H01L 24/48 : of an individual wire connector
• CPC Class Codes: H01L 2924/00 : Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00014 : the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/00015 : the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed as prior art
• CPC Class Codes: H01L 2924/01005 : Boron [B]
• CPC Class Codes: H01L 2924/01006 : Carbon [C]
• CPC Class Codes: H01L 2924/01013 : Aluminum [Al]
• CPC Class Codes: H01L 2924/01014 : Silicon [Si]
• CPC Class Codes: H01L 2924/01022 : Titanium [Ti]
• CPC Class Codes: H01L 2924/01029 : Copper [Cu]
• CPC Class Codes: H01L 2924/0105 : Tin [Sn]
• CPC Class Codes: H01L 2924/01073 : Tantalum [Ta]
• CPC Class Codes: H01L 2924/014 : Solder alloys
• CPC Class Codes: H01L 2924/04941 : TiN
• CPC Class Codes: H01L 2924/04953 : TaN
• CPC Class Codes: H01L 2924/0496 : 6th Group

Abstract

The present invention relates to a bonding pad of a semiconductor device and a formation method thereof, and the object of the present invention is to prevent bonding defects by enlarging contact area between a bonding pad and a soldering material and to prevent moisture from penetrating into an oxide layer. The present invention provides a bonding pad of a semiconductor device comprising: a barrier metal layer formed on a structure of a semiconductor substrate; a metal wire layer formed on the barrier metal layer; a passivation metal layer formed on the metal wire layer and removed partly to expose a portion of the upper surface of the metal wire layer; an insulating layer which is formed on the passivation metal layer and has a contact hole exposing the metal wire layer via the portion that the passivation metal layer is removed; and an adhesive metal layer formed on the inner surface of the contact hole.

Claims

1. A bonding pad of a semiconductor device comprising:

a barrier metal layer formed on a structure of a semiconductor substrate;

a metal wire layer formed on the barrier metal layer;

a passivation metal layer formed on the metal wire layer and removed partly to expose a portion of the upper surface of the metal wire layer;

an insulating layer which is formed on the passivation metal layer and has a contact hole exposing the metal wire layer via the portion that the passivation metal layer is removed; and

an adhesive metal layer formed on the inner surface of the contact hole.

2. The bonding pad of claim 1, wherein the adhesive metal layer is made of any one of metallic material selected from a group of Al, Ti, and TiN.

3. The bonding pad of claim 1, wherein the adhesive metal layer has a thickness of 1000-3000 Å

.

4. A formation method of a bonding pad of a semiconductor device comprising:

forming a barrier metal layer on a structure of a semiconductor substrate and depositing a metal wire layer and a passivation metal layer on the barrier metal layer;

forming an insulating layer and a passivation layer covering the barrier metal layer, the metal wire layer, and the passivation metal layer;

forming a contact hole by coating a photoresist layer on the passivation layer, exposing and developing the photoresist layer to remove a portion of the photoresist layer selectively on an area where a contact hole will be formed, and etching the passivation layer exposed by the removed portion of the photoresist layer and the insulating layer and passivation metal layer under the passivation layer;

removing the photoresist layer and forming a metal layer on entire surfaces of the passivation layer and the contact hole; and

forming an adhesive metal layer by dry-etching the metal layer to remove portions of the metal layer placed on the surfaces of the passivation layer and metal wire layer and thus remaining only the portion of the metal layer inside the contact hole.

5. The method of claim 4, wherein the metal wire layer is formed by depositing aluminum alloy at a temperature of equal to or higher than 100°

C.

6. The method of claim 4, wherein the metal layer is made of any one of metallic material selected from a group of Al, Ti, and TiN.

7. The method of claim 4, wherein the metal layer has a thickness of 1000-3000 Å

.

8. The method of claim 4, wherein the metal layer is deposited at a temperature of 200-400°

C.