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Etch thinning techniques for wafer-to-wafer vertical stacks

  • US 20040118806A1
  • Filed: 12/24/2002
  • Published: 06/24/2004
  • Est. Priority Date: 12/24/2002
  • Status: Active Grant
First Claim
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1. A method of fabricating a stacked microelectronic device, comprising:

  • providing a stacked wafer structure including a first microelectronic wafer attached to a second microelectronic wafer by at least one interconnect layer extending between an active surface of the first microelectronic wafer and an active surface of the second microelectronic wafer, wherein a portion of said first microelectronic wafer is unsupported; and

    etching away said first microelectronic wafer unsupported portion.

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