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Vertical JFET limited silicon carbide power metal-oxide semiconductor field effect transistors and methods of fabricating vertical JFET limited silicon carbide metal- oxide semiconductor field effect transistors

  • US 20040119076A1
  • Filed: 10/30/2003
  • Published: 06/24/2004
  • Est. Priority Date: 12/20/2002
  • Status: Active Grant
First Claim
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1. A silicon carbide metal-oxide semiconductor field effect transistor unit cell, comprising:

  • an n-type silicon carbide drift layer;

    a first p-type silicon carbide region adjacent the drift layer;

    a first n-type silicon carbide region within the first p-type silicon carbide region;

    an oxide layer on the drift layer, the first p-type silicon carbide region, and the first n-type silicon carbide region; and

    an n-type silicon carbide limiting region disposed between the drift layer and a portion of the first p-type silicon carbide region, wherein the n-type limiting region has a carrier concentration that is greater than a carrier concentration of the drift layer.

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