LIGHT EMITTING DEVICE WITH A MICRO-REFLECTION STRUCTURE CARRIER

• US 20040119084A1
• Filed: 10/29/2003
• Published: 06/24/2004
• Est. Priority Date: 12/23/2002
• Status: Active Grant

• Current Assignee: Epistar Corporation
• Original Assignee: Epistar Corporation
• Inventors: Liu, Wen-Huang, Hsieh, Min-Hsun
• Granted Patent: US 7,154,121 B2
• Time in Patent Office: Days
• US Class Current: 257/98
• CPC Class Codes: H01L 2933/0091 Scattering means in or on the semiconductor body or semiconductor body package H01L33/22 takes precedence
• CPC Class Codes: H01L 33/46 Reflective coating, e.g. dielectric Bragg reflector

Abstract

A light emitting device includes a micro-reflection structure carrier, which is formed by performing etching process on a carrier, a reflection layer, a light emitting layer, and a transparent adhesive layer, wherein the reflection layer is formed over the micro-reflection structure carrier and adheres to the light emitting layer through the transparent adhesive layer.

Claims

1. A light emitting device comprising:

a micro-reflection structure carrier;

a reflection layer formed over the micro-reflection structure carrier;

a transparent adhesive layer formed over the reflection layer; and

a light emitting stack layer formed over the transparent adhesive layer.

2. The light emitting device of claim 1 further comprising a first reaction layer between the reflection layer and the transparent adhesive layer.

3. The light emitting device of claim 1 further comprising a second reaction layer between the transparent adhesive layer and the light emitting stack layer.

4. The light emitting device of claim 1 further comprising a first electrode and a second electrode formed on the same upper surface of the light emitting stack layer.

5. The light emitting device of claim 1 further comprising a first electrode and a second electrode formed on the upper surface of the light emitting stack layer and the lower surface of the micro-reflection structure carrier respectively.

6. The light emitting device of claim 1, wherein the light emitting stack layer comprises:

a second reaction layer formed over the transparent adhesive layer;

a first transparent conductive layer formed over the second reaction layer;

a first contact layer formed over the transparent conductive layer;

a first cladding layer formed between the first contact layer and the light emitting layer;

a second cladding layer formed over the light emitting layer;

a second contact layer formed over the second cladding layer;

a first electrode; and

a second electrode formed over the second contact layer.

7. The light emitting device of claim 6, wherein the transparent conductive layer has a first surface area and a second surface area, the first contact layer is formed over the first surface area, and the first electrode is formed over the second surface area.

8. The light emitting device of claim 7 further comprising a transparent carrier between the second reaction layer and the transparent conductive layer.

9. The light emitting device of claim 6, wherein the micro-reflection structure carrier is a conductive micro-reflection structure carrier, the transparent adhesive layer is a transparent conductive adhesive layer, and the first electrode is formed over a lower surface of the conductive micro-reflection structure carrier.

10. The light emitting device of claim 1, wherein the shape of the micro-reflection structure carrier comprises at least one shape selected from a group consisting of a hemisphere and a pyramid.

11. The light emitting device of claim 1, wherein the micro-reflection structure carrier comprises at least one material selected from a group consisting of GaP, GaAs, GaAsP, InGaP, AlGaInP, AlGaAs, Si, SiC, glass, BN, AlN, and Ge.

12. The light emitting device of claim 9, wherein the conductive micro-reflection structure carrier comprises at least one material selected from a group consisting of Si, GaAs, SiC, GaP, GaAsP, InGaP, AlGaInP, AlGaAs, BN, and AlN.

13. The light emitting device of claim 8, wherein the transparent carrier comprises at least one material selected from a group consisting of GaP, SiC, Al₂O₃, and glass.

14. The light emitting device of claim 1, wherein the reflection layer comprises at least one material selected from a group consisting of Sn, Al, Au, Pt, Zn, Ag, Ti, Pb, Pd, Ge, Cu, AuBe, AuGe, Ni, PbSn, and AuZn.

15. The light emitting device of claim 1, wherein the transparent adhesive layer comprises at least one material selected from a group consisting of polyimide (PI), benzocyclobutane (BCB), and perfluorocyclobutane (PFCB).

16. The light emitting device of claim 2, wherein the first reaction layer comprises at least one material selected from a group consisting of SiNx, Ti, and Cr.

17. The light emitting device of claim 3, wherein the second reaction layer comprises at least one material selected from a group consisting of SiNx, Ti, and Cr.

18. The light emitting device of claim 6, wherein the second reaction layer comprises at least one material selected from a group consisting of SiNx, Ti, and Cr.

19. The light emitting device of claim 9, wherein the transparent conductive adhesive layer comprises at least one conductive material selected from a group consisting of intrinsically conducting polymer, and polymer mixed with conducting material.

20. The light emitting device of claim 19, wherein the conducting material comprises at least one material selected from a group consisting of indium tin oxide, cadmium tin oxide, antimony tin oxide, zinc oxide, zinc tin oxide, Au, and Ni/Au.

21. The light emitting device of claim 6, wherein the first cladding layer comprises at least one material selected from a group consisting of AlGaInP, AlN, GaN, AlGaN, InGaN, and AlInGaN.

22. The light emitting device of claim 6, wherein the light emitting layer comprises at least one material selected from a group consisting of AlGaInP, GaN, InGaN, and AlInGaN.

23. The light emitting device of claim 6, wherein the second cladding layer comprises at least one material selected from a group consisting of AlGaInP, AlN, GaN, AlGaN, InGaN, and AlInGaN.

24. The light emitting device of claim 6, wherein the first contact layer comprises at least one material selected from a group consisting of GaP, GaAs, GaAsP, InGaP, AlGaInP, AlGaAs, GaN, InGaN, and AlGaN.

25. The light emitting device of claim 6, wherein the second contact layer comprises at least one material selected from a group consisting of GaP, GaAs, GaAsP, InGaP, AlGaInP, AlGaAs, GaN, InGaN, and AlGaN.

26. The light emitting device of claim 6, wherein a second transparent conductive layer is formed between the second electrode and the second contact layer.

27. The light emitting device of claim 6, wherein the first transparent conductive layer comprises at least one material selected from a group consisting of indium tin oxide, cadmium tin oxide, antimony tin oxide, zinc oxide, and zinc tin oxide.

28. The light emitting device of claim 26, wherein the second transparent conductive layer comprises at least one material selected from a group consisting of indium tin oxide, cadmium tin oxide, antimony tin oxide, zinc oxide, and zinc tin oxide.