Method for reworking a lithographic process to provide an undamaged and residue free arc layer

• US 20040121269A1
• Filed: 12/18/2002
• Published: 06/24/2004
• Est. Priority Date: 12/18/2002
• Status: Active Grant

• Current Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Original Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Inventors: Liu, Ai-Sen, Lin, Chun-Hsien
• Granted Patent: US 6,929,901 B2
• Time in Patent Office: Days
• US Class Current: 430/329
• CPC Class Codes: B08B 7/0021 by liquid gases or supercritical fluids
• CPC Class Codes: G03F 7/091 characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
• CPC Class Codes: G03F 7/422 using liquids only G03F7/421 takes precedence
• CPC Class Codes: G03F 7/425 containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen

Abstract

A method of removing resinous organic material over a semiconductor process surface including providing a semiconductor wafer having a process surface comprising a resinous organic material; and, exposing the process surface to a supercritical CO₂ containing medium further comprising at least a first solvent for a predetermined period to produce a substantially resinous organic material free and undamaged process surface.

Claims

1. A method of removing a energy-sensitive material over a semiconductor process surface comprising the steps of:

providing a semiconductor wafer having a process surface comprising said energy-sensitive material; and

,

exposing the process surface to a supercritical CO₂ containing medium further comprising at least a first solvent for a predetermined period to produce a substantially energy-sensitive material free and undamaged process surface.

2. The method of claim 1, wherein the energy-sensitive material comprises a resist layer.

3. The method of claim 2, wherein the process surface further comprises an anti-reflectance coating (ARC) layer underlying the resist layer which is produced with substantially the same index of refraction following the step of exposing.

4. The method of claim 3, wherein the ARC layer is selected from the group of silicon oxynitrides and silicon oxycarbides.

5. The method of claim 2, further comprising the step of forming a second resist layer over the semiconductor wafer process surface without an intervening rinsing or drying step.

6. The method of claim 2, wherein the resist layer comprises a photoresist including a carboxylic acid group.

7. The method of claim 2, wherein the resist layer is a patterned DUV photoresist layer comprising a photoacid generator.

8. The method of claim 1, wherein the energy-sensitive material comprises a compound selected from the group consisting of Novolak resins, phenol-formaldehyde resins, poly(p-vinylphenol)cyclized polyisoprene, poly(p-vinylphenol), polymethylmethacrylate, and polybutene sulfone.

9. The method of claim 1, wherein the first solvent comprises a first solvent selected from the group consisting of ketones, phenols, halogenated hydrocarbons, sulfonic acids and carboxylic acids.

10. The method of claim 1, wherein the first solvent comprises a first solvent selected from the group consisting of pyrrolidones, glycol ethers, esters, ketones, and sulfur oxides.

11. The method of claim 1, wherein the supercritical CO₂ containing medium further comprises a co-solvent amine selected from the group consisting of alkyl amines, hydroxyalkyl amines, phenyl amines, alkylphenyl amines, and hydroxyalkylphenyl amines.

12. The method of claim 1, wherein the supercritical CO₂ containing medium further comprises a surfactant.

13. The method of claim 1, wherein the supercritical CO₂ containing medium further comprises a corrosion inhibitor selected form the group consisting of EDTA and Benzotriazole.

14. The method of claim 1, wherein the predetermined period is from about 15 seconds to about 90 seconds.

15. A method of reworking a lithographically patterned semiconductor process wafer to preserve an anti-reflective property comprising the steps of:

providing a semiconductor wafer having a process surface comprising an anti-reflectance coating (ARC) layer with predetermined anti-reflective properties and an overlying patterned energy-sensitive layer;

exposing the process surface to a supercritical CO₂ containing fluid further comprising at least a first solvent for a predetermined period to produce the ARC layer with substantially the same predetermined anti-reflective properties; and

,

forming a second resist layer over the semiconductor wafer process surface.

16. The method of claim 15, wherein the energy-sensitive layer is insoluble in a resist stripping solution.

17. The method of claim 15, wherein the step of forming is carried out without an intervening rinsing or drying step.

18. The method of claim 15, wherein the first solvent comprises a first solvent selected from the group consisting of ketones, phenols, halogenated hydrocarbons, sulfonic acids and carboxylic acids.

19. The method of claim 15, wherein the first solvent comprises a first solvent selected from the group consisting of pyrrolidones, glycol ethers, esters, ketones, and sulfur oxides.

20. The method of claim 15, wherein the supercritical CO₂ containing fluid further comprises a co-solvent amine selected from the group consisting of alkyl amines, hydroxyalkyl amines, phenyl amines, alkylphenyl amines, and hydroxyalkylphenyl amines.

21. The method of claim 15, wherein the supercritical CO₂ containing fluid further comprises a surfactant during at least a portion of the step of exposing.

22. The method of claim 15, wherein the supercritical CO₂ containing fluid further comprises a corrosion inhibitor selected form the group consisting of EDTA and Benzotriazole.

23. The method of claim 15, wherein the predetermined period is from about 15 seconds to about 90 seconds.