Optical device and method of manufacture thereof

• US 20040121500A1
• Filed: 12/05/2003
• Published: 06/24/2004
• Est. Priority Date: 12/10/2002
• Status: Active Grant

• Current Assignee: Qorvo US, Inc. (Qorvo, Inc.)
• Original Assignee: TriQuint Technology Holding Co (Qorvo, Inc.)
• Inventors: Peticolas, Junstin L., Ougazzaden, Abdallah, Ketelsen, Leonard Jan-Peter
• Granted Patent: US 7,008,805 B2
• Time in Patent Office: Days
• US Class Current: 438/39
• CPC Class Codes: H01L 31/0203 Containers; Encapsulations , e.g. encapsulation of photodiodesfor photovoltaic devices H01L31/048; for organic photosensitive devices H10K30/80
• CPC Class Codes: H01S 5/2227 special thin layer sequence
• CPC Class Codes: H01S 5/2275 mesa created by etching

Abstract

The present invention provides an optical device and a method of manufacture thereof. In one embodiment, the method of manufacturing the optical device may include isolating an end of a first layer from a cladding layer located over a mesa structure that has been formed from a substrate. The end of the first layer may be isolated from the cladding layer by encapsulating the end between second and third layers located adjacent the mesa structure.

Claims

1. A method of manufacturing an optical device, comprising:

forming a mesa structure from said substrate, said mesa structure having a cladding layer located thereover; and

isolating an end of a first layer from said cladding layer by encapsulating said end between second and third layers located adjacent said mesa structure.

2. The method as recited in claim 1 wherein said first layer comprises indium phosphide and said encapsulating includes forming said first layer having said isolated end in the presence phosphorous trichloride.

3. The method as recited in claim 1 wherein said second and third layers comprise indium phosphide and said encapsulating includes forming said second and third layers in an atmosphere substantially free of phosphorous trichloride.

4. The method as recited in claim 1 wherein said isolating includes forming said first layer in the presence of a compound containing chlorine or bromine.

5. The method as recited in claim 1 wherein said second and third layers are doped with an n-type dopant.

6. The method as recited in claim 1 further including a fourth layer wherein said second layer is located between said first and fourth layers and said fourth layer is doped with a p-type dopant.

7. The method as recited in claim 1 wherein said first layer is doped with a metal capable of diffusing into said cladding layer.

8. An optical device, comprising:

a mesa structure;

a cladding layer located over said mesa structure; and

first, second, and third layers located adjacent said cladding layer, an end of said second layer encapsulated between said first and third layers and isolated from said cladding layer.

9. The optical device recited in claim 8 wherein said optical device forms at least a portion of a transmitter.

10. The optical device recited in claim 8 further comprising a fourth layer located between said mesa structure and said second layer, wherein said first and third layers are doped with an n-type dopant, said second layer is doped with a metal and said fourth layer is doped with a p-type dopant.

11. The optical device as recited in claim 8 further comprising a contact located over said cladding layer.

12. The optical device as recited in claim 10 further including a fifth layer located adjacent said mesa structure wherein said fifth layer comprises indium aluminum arsenide.

13. The optical device as recited in claim 8 wherein said second layer is doped with a metal capable of diffusing into said cladding layer.

14. The optical device as recited in claim 8 further including a fourth layer located between said mesa structure and said first layer and wherein said first, third and fourth layers extend along a wall of said mesa structure.

15. An optical transmitter, comprising:

a radiation source, including;

a mesa structure;

a cladding layer located over said mesa structure; and

first, second, and third blocking layers located adjacent said cladding layer, an end of said second blocking layer encapsulated between said first and third blocking layers and isolated from said cladding layer;

an electric source coupled to said radiation source; and

a waveguide coupled to said radiation source.

16. The optical transmitter as recited in claim 15 wherein said second layer is doped with a metal capable of diffusing into said cladding layer.

17. The optical transmitter recited in claim 15 further comprising a modulator coupled to said radiation source.

18. The optical transmitter recited in claim 15 wherein said optical transmitter is coupled to a component selected from the group consisting of:

a PIN diode;

a laser;

a modulator; and

a photodetector.

19. The optical transmitter recited in claim 15 further comprising a fourth layer located between said mesa structure and said second layer, wherein said first and third layers are doped with an n-type dopant, said second layer is doped with a metal and said fourth layer is doped with a p-type dopant.

20. The optical transmitter as recited in claim 19 wherein said first, third and fourth layers extend along a wall of said mesa structure.