Process for the fabrication of an inertial sensor with failure threshold
First Claim
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1. A process for the fabrication of an inertial sensor with failure threshold, comprising the steps of:
- forming, on top of a substrate of a semiconductor wafer, at least one sample element embedded in a sacrificial region;
forming, on top of said sacrificial region, a body connected to said sample element; and
etching said sacrificial region, so as to free said body and said sample element.
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Abstract
A process for the fabrication of an inertial sensor with failure threshold includes the step of forming, on top of a substrate of a semiconductor wafer, a sample element embedded in a sacrificial region, the sample element configured to break under a preselected strain. The process further includes forming, on top of the sacrificial region, a body connected to the sample element and etching the sacrificial region so as to free the body and the sample element. The process may also include forming, on the substrate, additional sample elements connected to the body.
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Citations
28 Claims
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1. A process for the fabrication of an inertial sensor with failure threshold, comprising the steps of:
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forming, on top of a substrate of a semiconductor wafer, at least one sample element embedded in a sacrificial region;
forming, on top of said sacrificial region, a body connected to said sample element; and
etching said sacrificial region, so as to free said body and said sample element. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15)
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16. A method for manufacturing an inertial sensor, comprising:
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forming, on a semiconductor substrate, a sample element having a first end coupled to the substrate, the sample element being configured to break under a preselected strain; and
forming, above the semiconductor substrate, a semiconductor material body coupled to a second end of the sample element. - View Dependent Claims (17, 18, 19, 20)
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21. A method of measuring movement of a device, comprising:
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providing, in the device, a circuit configured to permanently change a conductive state of a conductive path in the event the device is subjected to an acceleration exceeding a preselected level;
applying a potential at first and second ends of the conductive path; and
detecting a change in the conductive state of the conductive path. - View Dependent Claims (22, 23, 24, 25, 26, 27, 28)
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Specification