SHALLOW TRENCH ISOLATION PROCESS
First Claim
1. A shallow trench isolation (STI) process, comprising:
- forming a patterned mask layer on a substrate;
forming a trench in the substrate with the mask layer as a mask;
removing a portion of the mask layer around the trench;
removing a portion of the substrate around a top portion of the trench with the remaining mask layer as a mask;
forming a liner layer in the trench;
removing the liner layer on the top portion of the trench;
filling an insulating material into the trench covering the liner layer remaining in the trench; and
removing the mask layer with an etchant, wherein the liner layer comprises a material that can also be etched by the etchant.
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Accused Products
Abstract
A shallow trench isolation (STI) process is described. A patterned mask layer is formed on a substrate, and then a trench is formed in the substrate with the mask layer as a mask. A portion of the mask layer around the trench is removed, and a portion of the substrate around the top portion of the trench is removed with the remaining mask layer as a mask. A liner layer is formed in the trench. The liner layer on the top portion of the trench is then removed with a pre-deposition process of an HDP-CVD process. Thereafter, an insulating material is filled into the trench, and the mask layer is removed with an etchant. In STI process, the liner layer comprises a material that can also be etched by the etchant.
19 Citations
26 Claims
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1. A shallow trench isolation (STI) process, comprising:
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forming a patterned mask layer on a substrate;
forming a trench in the substrate with the mask layer as a mask;
removing a portion of the mask layer around the trench;
removing a portion of the substrate around a top portion of the trench with the remaining mask layer as a mask;
forming a liner layer in the trench;
removing the liner layer on the top portion of the trench;
filling an insulating material into the trench covering the liner layer remaining in the trench; and
removing the mask layer with an etchant, wherein the liner layer comprises a material that can also be etched by the etchant. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15)
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16. A shallow trench isolation (STI) process, comprising:
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forming a mask layer on a substrate;
forming a trench-like opening in the mask layer;
forming spacers on sidewalls of the trench-like opening;
forming a trench in the substrate with the mask layer and the spacers as a mask;
forming a thermal oxide layer on surfaces of the trench with a thermal oxidation process, such that bird”
s beaks are formed under the spacers;
forming a liner layer in the trench;
removing the liner layer on a top portion of the trench;
filling an insulating material into the trench covering the liner layer remaining in the trench; and
removing the mask layer with an etchant, wherein the liner layer comprises a material that can also be etched by the etchant. - View Dependent Claims (17, 18, 19, 20, 21, 22, 23, 24, 25, 26)
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Specification