Methods of fabricating devices by low pressure cold welding

• US 20040121568A1
• Filed: 03/13/2003
• Published: 06/24/2004
• Est. Priority Date: 12/20/2002
• Status: Active Grant

• Current Assignee: The Trustees of Princeton University (Princeton University)
• Original Assignee: The Trustees of Princeton University (Princeton University)
• Inventors: Forrest, Stephen R., Kim, Changsoon
• Granted Patent: US 8,222,072 B2
• Time in Patent Office: Days
• US Class Current: 438/584
• CPC Class Codes: B33Y 10/00 Processes of additive manufacturing
• CPC Class Codes: H10K 10/466 Lateral bottom-gate IGFETs comprising only a single gate
• CPC Class Codes: H10K 10/468 characterised by the gate dielectrics
• CPC Class Codes: H10K 71/13 using printing techniques, e.g. ink-jet printing or screen printing
• CPC Class Codes: H10K 71/611 using printing deposition, e.g. ink jet printing

Abstract

Methods of transferring a metal and/or organic layer from a patterned stamp, preferably a soft, elastomeric stamp, to a substrate are provided. The patterned metal or organic layer may be used for example, in a wide range of electronic devices. The present methods are particularly suitable for nanoscale patterning of organic electronic components.

Claims

1. A method of fabricating a device, comprising:

depositing a metal layer over a patterned, soft elastomeric stamp; and

transferring the metal layer from the patterned, soft elastomeric stamp onto a substrate.

2. The method of claim 1, further comprising:

prior to depositing the metal layer, depositing an adhesion-reduction layer over the patterned, soft elastomeric stamp, such that the metal layer is deposited over the adhesion-reduction layer.

3. The method of claim 1, further comprising:

prior to transferring the metal layer onto the substrate, depositing a first organic layer over the metal layer over the patterned, soft elastomeric stamp;

prior to transferring the metal layer onto the substrate, depositing a second organic layer over the substrate; and

during the transfer of the metal layer to the substrate, transferring the first organic layer and the metal layer from the patterned, soft elastomeric stamp onto the second organic layer over the substrate.

4. The method of claim 1, further comprising:

prior to transferring the metal layer onto the substrate, depositing an organic layer over the substrate and a strike layer over the organic layer, such that the metal layer from the patterned, soft elastomeric stamp is transferred onto the strike layer such that the metal layer from the patterned, soft elastomeric stamp is in direct contact with the strike layer during the transfer.

5. The method of claim 4, further comprising:

prior to depositing the metal layer, depositing an adhesion-reduction layer over the patterned, soft elastomeric stamp, such that the metal layer is deposited over the adhesion-reduction layer.

6. The method of claim 4, wherein the strike layer comprises a metal.

7. The method of claim 4, wherein the strike layer comprises an organic material.

8. The method of claim 4, wherein the strike layer and the organic layer are in good electrical contact.

9. The method of claim 6, wherein depositing the strike layer further comprises depositing a layer of Al and LiF, followed by depositing a layer of Au.

10. The method of claim 9, wherein the layer of Al and LiF is less than about 1 nm thick, and the layer of Au is less than about 15 nm thick.

11. The method of claim 6, wherein the strike layer is about 5 to about 16 nm thick.

12. The method of claim 4, wherein the metal layer comprises Au.

13. The method of claim 6, wherein the method is performed in a vacuum.

14. The method of claim 6, wherein the metal layer from the patterned, soft elastomeric stamp is transferred onto the strike layer without the formation of an oxide layer.

15. The method of claim 6, wherein the metal layer is about 30 to about 100 nm thick.

16. The method of claim 4, further comprising:

removing portions of the strike layer that are not covered by the transferred metal layer.

17. The method of claim 16, wherein the portions of the strike layer are removed by sputtering.

18. The method of claim 4, wherein the metal layer is transferred from the patterned, soft elastomeric stamp onto the strike layer by applying a pressure of about 180 kPa or less.

19. The method of claim 4, wherein the metal layer from the patterned, soft elastomeric stamp is transferred onto the strike layer with a resolution of greater than or equal to about 100 nm.

20. The method of claim 4, wherein the stamp comprises poly(dimethylsiloxane).

21. The method of claim 4, wherein the stamp comprises an outer layer of a stiff material attached to a soft inner layer.

22. The method of claim 21, wherein the outer layer comprises h-PDMS and the inner layer comprises PDMS.

23. The method of claim 4, wherein the organic layer comprises a small molecule organic material.

24. The method of claim 4, wherein the organic layer further comprises a hole transporting layer, an electron blocking layer, an emissive layer, a hole blocking layer, and an electron transporting layer, deposited in that order over the substrate.

25. The method of claim 4, wherein the organic layer is patterned into regions capable of emitting different spectra of light.

26. The method of claim 4, further comprising:

fabricating a patterned bottom electrode over the substrate prior to depositing the organic layer.

35. The method of claim 4, wherein the strike layer comprises a continuous film.

27. A method of fabricating a device, comprising:

depositing a first metal layer over a patterned, soft elastomeric stamp;

depositing a first organic layer over the first metal layer;

depositing a second metal layer over the first organic layer; and

transferring the second metal layer, the first organic layer and the first metal layer from the patterned, soft elastomeric stamp onto a substrate.

28. The method of claim 27, further comprising:

prior to depositing the first metal layer, depositing an adhesion-reduction layer over the patterned, soft elastomeric stamp, such that the first metal layer is deposited over the adhesion-reduction layer.

29. A method of fabricating an organic device, comprising:

depositing a first organic layer onto a patterned, soft elastomeric stamp; and

transferring the first organic layer from the patterned, soft elastomeric stamp onto a substrate.

30. The method of claim 29, wherein the first organic layer comprises an active component of the device.

31. The method of claim 29, further comprising:

prior to depositing the first organic layer, depositing an adhesion-reduction layer over the patterned, soft elastomeric stamp, such that the first organic layer is deposited over the adhesion-reduction layer.

32. The method of claim 29, further comprising:

prior to depositing the first organic layer, depositing a metal layer over the patterned, soft elastomeric stamp, such that the first organic layer is deposited over the metal layer.

33. The method of claim 29, further comprising:

prior to transferring the first organic layer onto the substrate, depositing a second organic layer over the substrate, such that the first organic layer from the patterned, soft elastomeric stamp is transferred onto the second organic layer such that the first organic layer is in direct contact with the second organic layer during the transfer.

34. The method of claim 33, wherein the first organic layer is transferred from the patterned, soft elastomeric stamp onto the second organic layer by applying a pressure of about 180 kPa or less.