×

Trench MIS device having implanted drain-drift region and thick bottom oxide and process for manufacturing the same

  • US 20040121572A1
  • Filed: 12/19/2002
  • Published: 06/24/2004
  • Est. Priority Date: 07/03/2001
  • Status: Active Grant
First Claim
Patent Images

1. A process of fabricating a trench MIS device comprising;

  • providing a substrate of a first conductivity type;

    forming an epitaxial layer on the substrate, the epitaxial layer being being generally of a second conductivity type;

    forming a trench in the epitaxial layer;

    forming sidewall spacers in the trench;

    implanting a dopant of the first conductivity type between the sidewall spacers and through a bottom of the trench;

    forming a bottom insulating layer on the bottom of the trench between the sidewall spacers;

    removing the sidewall spacers;

    forming a gate insulating layer on the sidewalls of the trench, the gate insulating layer being thinner than the bottom insulating layer; and

    introducing a conductive material into the trench.

View all claims
  • 5 Assignments
Timeline View
Assignment View
    ×
    ×