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BARRIER FILM INTEGRITY ON POROUS LOW K DIELECTRICS BY APPLICATION OF A HYDROCARBON PLASMA TREATMENT

  • US 20040121586A1
  • Filed: 12/23/2002
  • Published: 06/24/2004
  • Est. Priority Date: 12/23/2002
  • Status: Active Grant
First Claim
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1. A method of fabricating an interconnect structure in an integrated circuit comprising:

  • forming an etch stop/diffusion barrier over an underlying layer;

    depositing an interlayer dielectric on the etch stop/diffusion barrier;

    etching vias and trenches in the interlayer dielectric;

    treating the surface of the interlayer dielectric with plasma, so as to deposit a coating of carbon-rich polymeric material;

    depositing a barrier layer over the surface of the treated interlayer dielectric, so as to line the vias and the trenches;

    forming a copper alloy over the barrier layer, so as to fill the vias and the trenches; and

    planarizing the copper alloy.

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