METHOD FOR FABRICATING METAL SILICIDE
First Claim
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1. A method for fabricating a metal silicide, comprising:
- providing a substrate, where the substrate comprises a dielectric layer already formed thereon;
forming a conductive layer on the dielectric layer;
forming an adhesion layer on the conductive layer; and
forming a metal silicide layer on the adhesion layer.
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Abstract
A method for fabricating a metal silicide layer includes forming a dielectric layer on a substrate, followed by forming a polysilicon material conductive layer on the dielectric layer. An adhesion layer is then formed on the conductive layer, wherein the adhesion layer is a nitrogen rich layer or a nitrogen ion implanted layer. A metal silicide layer is then formed on the adhesion layer. The adhesion between the metal silicide layer and the conductive layer is more desirable due the adhesion layer.
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Citations
19 Claims
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1. A method for fabricating a metal silicide, comprising:
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providing a substrate, where the substrate comprises a dielectric layer already formed thereon;
forming a conductive layer on the dielectric layer;
forming an adhesion layer on the conductive layer; and
forming a metal silicide layer on the adhesion layer. - View Dependent Claims (2, 3, 4, 8, 9)
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- 5. The method of claim 5, wherein the adhesion layer includes a nitrogen ion implanted layer.
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10. A fabrication method of a metal silicide layer, comprising:
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providing a substrate, wherein the substrate already comprises a dielectric layer formed thereon;
forming a conductive layer on the dielectric layer;
performing a deglaze process on the conductive layer;
forming an adhesion layer on the conductive layer and forming a metal silicide layer on the adhesion layer. - View Dependent Claims (11, 12, 13, 14, 15, 16, 17, 18, 19)
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Specification