ANALYSIS OF MEMS MIRROR DEVICE USING A LASER FOR MIRROR REMOVAL

• US 20040124186A1
• Filed: 12/30/2002
• Published: 07/01/2004
• Est. Priority Date: 12/30/2002
• Status: Active Grant

• Current Assignee: Texas Instruments, Inc.
• Original Assignee: Texas Instruments, Inc.
• Inventors: Harper, Curtis
• Granted Patent: US 6,781,094 B2
• Time in Patent Office: Days
• US Class Current: 219/121.72
• CPC Class Codes: G02B 26/0833 the reflecting element being a micromechanical device, e.g. a MEMS mirror, DMD G02B26/0825 takes precedence; micromechanical devices in general B81B
• CPC Class Codes: G02B 26/0841 the reflecting element being moved or deformed by electrostatic means

Abstract

A method of analyzing a MEMS device having micromirrors. A laser is targeted on one or more mirror elements and used to remove only the mirror. Once the mirror is removed, the underlying structure can be observed in operation, measured, elementally analyzed, or undergo other types of analysis.

Claims

1. A method of inspecting a target mirror element of a MEMS mirror device, comprising the steps of:

selecting one or more mirrors to be removed; and

using a laser to remove the selected one or more mirrors.

2. The method of claim 1, wherein the mirror element is part of a digital micromirror array.

3. The method of claim 1, wherein the selecting step is performed by selecting the mirror of the target mirror element.

4. The method of claim 1, wherein the selecting step is performed by selecting neighbor mirrors of the target mirror element.

5. The method of claim 1, wherein the selecting step is performed by selecting a mirror in the midst of an array of mirror elements.

6. The method of claim 1, wherein the selecting step is performed by selecting a mirror on the periphery of an array of mirror elements.

7. The method of claim 1, wherein the selecting step is performing by selecting a single line of mirrors of an array of mirror elements.

8. The method of claim 1, wherein the selected one or more mirrors are supported on a support via, and wherein the step of using the laser further removes all or part of the support via.

9. The method of claim 1, wherein the mirror element is located under a transparent window, such that the step of using a laser is performed through the window.

10. The method of claim 1, further comprising the step of measuring structures under the mirror.

11. The method of claim 1, further comprising the steps of operating the structure underlying the mirror, and observing the operation.

12. A method of analyzing a target mirror element of a MEMS mirror device, comprising the steps of:

selecting one or more mirrors to be removed;

using a laser to remove the selected one or more mirrors; and

performing an elemental analysis of the structure underlying the mirror.

13. The method of claim 12, wherein the elemental analysis is EDX analysis.

14. The method of claim 12, wherein the elemental analysis is auger analysis.