Method for producing organic electronic devices on deposited dielectric materials
First Claim
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1. A method for fabricating an organic electronic device comprising:
- depositing a dielectric material over a substrate;
plasma treating the dielectric material; and
depositing an organic semiconductor film over the plasma treated dielectric material.
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Abstract
A deposited dielectric (e.g., PECVD silicon nitride) formed on an inexpensive glass or plastic foil substrate is modified to facilitate the formation of high mobility organic semiconductor films. In one embodiment, the dielectric is plasma treated using nitrogen or argon gas to reduce the surface roughness of the dielectric layer below 5 nm (peak-to-valley). An organic semiconductor film (e.g., pentacene) grown on the modified dielectric exhibits high mobility and large polycrystalline grain sizes.
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Citations
20 Claims
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1. A method for fabricating an organic electronic device comprising:
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depositing a dielectric material over a substrate;
plasma treating the dielectric material; and
depositing an organic semiconductor film over the plasma treated dielectric material. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A method for fabricating an organic electronic device comprising:
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depositing a dielectric material over a substrate;
smoothing the deposited dielectric material until the deposited dielectric material has a peak-to-valley surface roughness that is less than 5 nm; and
depositing an organic semiconductor film over the smoothed dielectric material. - View Dependent Claims (12, 13, 14)
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15. A large-area electronic device comprising:
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a substrate;
an amorphous inorganic dielectric layer deposited over the substrate; and
an organic film formed on the amorphous inorganic dielectric layer, wherein a surface roughness of the amorphous inorganic dielectric layer is less than 5 nm (peak-to-valley). - View Dependent Claims (16, 17, 18, 19, 20)
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Specification