Low-capacitance electrostatic discharge protection diodes
First Claim
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1. An apparatus comprising:
- a first conductive layer to provide conductive interconnects for pad and supply diffusion regions in a diode;
a second conductive layer including a first portion to couple the pad diffusion regions to a pad and a second portion to couple the supply diffusion regions to a voltage supply, lines of the first and second conductive layers being substantially parallel to each other in a diode region of the diode.
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Abstract
A reduced capacitance diode. A first conductive layer provides conductive interconnects for pad and supply diffusion regions in a diode. A second conductive layer includes a first portion to couple the pad diffusion regions to a pad and a second portion to couple the supply diffusion regions to a voltage supply. Lines of the first and second conductive layers are substantially parallel to each other in a diode region of the diode. Further, for one aspect, a tap for the diode to be coupled to a supply is wider than a minimum width.
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Citations
20 Claims
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1. An apparatus comprising:
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a first conductive layer to provide conductive interconnects for pad and supply diffusion regions in a diode;
a second conductive layer including a first portion to couple the pad diffusion regions to a pad and a second portion to couple the supply diffusion regions to a voltage supply, lines of the first and second conductive layers being substantially parallel to each other in a diode region of the diode. - View Dependent Claims (2, 3, 4, 5)
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6. A diode comprising:
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at least a first supply diffusion region having a width that is substantially larger than a minimum width for the first supply region;
a first metal layer to provide interconnects for pad and supply diffusion regions including the at least first supply diffusion region; and
a second metal layer including a first portion to couple the pad diffusion regions to a pad and a second portion to coupled the supply diffusion regions to receive a supply voltage, lines of the first and second metal layers being substantially parallel to each other in a diode region of the diode. - View Dependent Claims (7, 8, 9, 10)
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11. An input buffer comprising:
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a pad to receive an input signal;
a first diode having a first terminal coupled to the pad and a second terminal coupled to receive a first supply voltage; and
a second diode having a first terminal coupled to the pad and a second terminal coupled to receive a second supply voltage, wherein, at least one of the first and second diodes includes a lower level metal layer and an adjacent higher level metal layer, lines of the lower level metal layer and higher level metal layer being substantially parallel to each other in a diode region of the at least one diode. - View Dependent Claims (12, 13, 14, 15)
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16. A method comprising:
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providing tap diffusion regions in a diode that are substantially wider than a minimum width for the tap diffusion regions;
providing pad diffusion regions;
providing a first conductive layer having lines that extend in a first direction across a diode region of the diode, the first conductive layer having conductive lines that are coupled to the pad and tap diffusion regions; and
providing a second adjacent conductive layer having lines that are substantially parallel to the lines of the first conductive layer in the diode region. - View Dependent Claims (17, 18, 19, 20)
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Specification