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Stacked semiconductor radiation sensors having color component and infrared sensing capability

  • US 20040125222A1
  • Filed: 12/30/2002
  • Published: 07/01/2004
  • Est. Priority Date: 12/30/2002
  • Status: Active Grant
First Claim
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1. A sensing structure, comprising:

  • a first junction formed at a first depth in a semiconductor substrate to sense infrared radiation; and

    a second junction formed at a second depth in the semiconductor substrate to sense visible radiation, the second depth being less deep than the first depth.

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