Charge dissipation in electrostatically driven devices
First Claim
1. A method of making a charge-dissipation structure in a device having a dielectric and at least one electrode on a surface of the dielectric, comprising implanting ions in the dielectric to form a charge-dissipation structure in the dielectric.
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Abstract
A charge-dissipation structure is formed within the dielectric of an electrostatically driven device, such as a micro-electro-mechanical systems (“MEMS”) device, by ion implantation. Electrical and other properties of the charge-dissipation structure may be controlled by selection of the species, energy, and dose of implanted ions. With appropriate properties, such a charge-dissipation structure can reduce the effect on device operation of mobile charges in or on the dielectric.
78 Citations
26 Claims
- 1. A method of making a charge-dissipation structure in a device having a dielectric and at least one electrode on a surface of the dielectric, comprising implanting ions in the dielectric to form a charge-dissipation structure in the dielectric.
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14. A device comprising:
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a dielectric;
at least one electrode disposed on a surface of the dielectric; and
a charge-dissipation structure in the dielectric. - View Dependent Claims (15, 16, 17, 18, 19, 20, 21, 22, 23, 24)
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25. A device comprising:
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a dielectric having ions implanted therein; and
at least one electrode disposed on a surface of the dielectric. - View Dependent Claims (26)
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Specification