Oxide-confined VCSEL device and the method for making the same

• US 20040125840A1
• Filed: 04/01/2003
• Published: 07/01/2004
• Est. Priority Date: 12/27/2002
• Status: Abandoned Application

• Current Assignee: Industrial Technology Research Institute
• Original Assignee: Industrial Technology Research Institute
• Inventors: Jiang, Wen-Jang, Yang, Hung-Pin, Yu, Hsin-Chieh, Sung, Chia-Pin
• Application Number:
  US10/402,992
• Publication Number:
  US 20040125840A1
• Time in Patent Office: Days
• US Class Current: 372/46
• CPC Class Codes: H01S 5/02461 Structure or details of the laser chip to manipulate the heat flow, e.g. passive layers in the chip with a low heat conductivity
• CPC Class Codes: H01S 5/18311 using selective oxidation
• CPC Class Codes: H01S 5/18327 Structure being part of a DBR H01S5/18391 takes precedence
• CPC Class Codes: H01S 5/18375 based on metal reflectors
• CPC Class Codes: H01S 5/18377 comprising layers of different kind of materials, e.g. combinations of semiconducting with dielectric or metallic layers

Abstract

An oxide-confined vertical cavity surface emitting laser (VCSEL) device and the method for manufacturing the same are disclosed. After completing the oxidation procedure for the oxide-confined VCSEL, a filling material is deposited on the etched groove. This procedure can planarize the etched device surface for subsequent fabrication of a metal electrode. The invention can improve the device yield and the properties at the same time.

Claims

1. An oxide-confined vertical cavity surface emitting laser (VCSEL) having a selective oxide current confinement region established on the surface of a substrate and an etched groove passing through the selective oxide current confinement region on the VCSEL surface to turn an exposed AlGaAs layer surrounding the selective oxide current confinement region into an insulating aluminum oxide layer, forming an oxide aperture with a low index of refraction, is characterized in that:

the etched groove is filled with a filling material to form a filling wall, planarizing the surface of the VCSEL, and a metal electrode is formed across the filling wall on the surface of the VCSEL for providing electrical communications.

2. The oxide-confined VCSEL of claim 1, wherein the filling material is a metal.

3. The oxide-confined VCSEL of claim 2, wherein the metal is selected from the group consisting of silver and aluminum.

4. The oxide-confined VCSEL of claim 1, wherein the filling material is conductive and an insulating layer is further inserted between the filling wall and the metal electrode to block electrical communications.

5. A method for manufacturing an oxide-confined VCSEL, which comprising the steps of:

providing a VCSEL, whose epitaxial structure contains a selective oxide current confinement region;

forming an etched groove on the surface of the VCSEL, deep enough to pass the selective oxide current confinement region;

oxidizing the exposed selective oxide current confinement region in the etched groove toward the center, so that an AlGaAs layer on the outer region of the selective oxide current confinement region is turned into an aluminum oxide dielectric layer, forming an oxide aperture with a low index of refraction;

filling a filling material in the etched groove to form a filling wall, planarizing the surface of the VCSEL; and

forming a metal electrode on the surface of the VCSEL across the filling wall for providing electrical communications.

6. The method of claim 5, wherein the filling material is a metal.

7. The method of claim 6, wherein the metal is selected from the group consisting of silver and aluminum.

8. The method of claim 5 further comprising the step of forming an insulating layer between the filling wall and the metal electrode to block electrical communications when the filling material is conductive.

9. The method of claim 5, wherein the step of oxidizing the exposed selective oxide current confinement region in the etched groove toward the center is achieved by supplying the etched groove with high-temperature water vapor.

10. The method of claim 5, wherein the step of forming an etched groove on the surface of the VCSEL is achieved using an anisotropic etching means.

11. The method of claim 5, wherein the step of filling a filling material in the etched groove to form a filling wall is achieved by combining the photolithography and evaporation methods.