Photo diode, opto-electronic integrated circuit device comprising the same, and method for manufacturing the same

• US 20040126922A1
• Filed: 07/02/2003
• Published: 07/01/2004
• Est. Priority Date: 12/26/2002
• Status: Abandoned Application

• Current Assignee: Samsung Electro-Mechanics Co., Ltd. (Samsung Group)
• Original Assignee: Samsung Electro-Mechanics Co., Ltd. (Samsung Group)
• Inventors: Kwon, Kyoung Soo, Ko, Joo Yul, Kim, Sang Suk, Park, Deuk Hee
• Application Number:
  US10/610,678
• Publication Number:
  US 20040126922A1
• Time in Patent Office: Days
• US Class Current: 438/57
• CPC Class Codes: H01L 31/02322 comprising luminescent members, e.g. fluorescent sheets upon the device
• CPC Class Codes: H01L 31/103 the potential barrier being of the PN homojunction type
• CPC Class Codes: H01L 31/1804 comprising only elements of Group IV of the Periodic Table
• CPC Class Codes: Y02E 10/547 Monocrystalline silicon PV cells
• CPC Class Codes: Y02P 70/50 Manufacturing or production processes characterised by the final manufactured product

Abstract

Disclosed are a photo diode sensing a short-wavelength light in a blue band, an opto-electronic integrated circuit device comprising the photo diode, and a method of manufacturing the photo diode. The method for manufacturing the photo diode, comprising the steps of: preparing a silicon substrate; forming a first conductive impurity region at a first region on the silicon substrate; forming a second conductive impurity region at a second region on the silicon substrate, said second region being separated from the first region; and forming a porous silicon layer by chemically etching a surface of the second conductive impurity region.

Claims

1. A method for manufacturing a photo diode, comprising the steps of:

preparing a silicon substrate;

forming a first conductive impurity region at a first region on the silicon substrate;

forming a second conductive impurity region at a second region on the silicon substrate, said second region being separated from the first region; and

forming a porous silicon layer by chemically etching a surface of the second conductive impurity region.

2. The method for manufacturing a photo diode as set forth in claim 1,

wherein a stain etching process is used in the step of forming the porous silicon layer.

3. The method for manufacturing a photo diode as set forth in claim 2,

wherein the step of forming the porous silicon layer includes the sub-steps of:

forming a photoresist on the silicon substrate so as to expose the surface of the second conductive impurity region; and

etching the exposed surface of the second conductive impurity region with an etching solution.

4. The method for manufacturing a photo diode as set forth in claim 3,

wherein the etching solution is a compound solution containing HF:

HNO₃;

H₂O in a ratio of approximately 1;

3;

5.

5. A photo diode comprising:

a silicon substrate;

a first conductive impurity region formed at a first region on the silicon substrate;

a second conductive impurity region formed at a second region on the silicon substrate, said second region being separated from the first region; and

a porous silicon layer being formed by chemically etching a surface of the second conductive impurity region and serving to convert a wavelength of incident light in an ultraviolet light band into a wavelength in a visible light band so as to be transmitted by the silicon substrate.

6. An opto-electronic integrated circuit formed on a silicon semiconductor substrate, comprising:

a photo diode formed at one region on the silicon semiconductor substrate, including;

a silicon substrate;

a first conductive impurity region formed at a first region on the silicon substrate;

a second conductive impurity region formed at a second region on the silicon substrate, said second region being separated from the first region; and

a porous silicon layer being formed by chemically etching a surface of the second conductive impurity region and serving to convert a wavelength of incident light in an ultraviolet light band into a wavelength in a visible light band so as to be transmitted by the silicon substrate; and

an integrated circuit portion formed at the other region on the silicon substrate so as to amplify a signal outputted from a cell of the photo diode and process the amplified signal.