Semiconductor devices and methods to form a contact in a semiconductor device
First Claim
1. A method to form a contact comprising:
- forming an insulating layer on a substrate;
etching the insulating layer to form a contact hole;
depositing a silicon layer on sidewalls and an undersurface of the contact hole;
forming a silicon spacer on the sidewalls of the contact hole by etching the silicon layer;
plasma treating the silicon spacer to form a silicon nitride spacer;
depositing a diffusion barrier on the silicon nitride spacer; and
filling the contact hole with tungsten.
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Accused Products
Abstract
Semiconductor devices and methods to form a contact of a semiconductor device are disclosed. An example method to form a contact includes forming an insulating layer on a substrate; etching the insulating layer to form a contact hole; depositing a silicon layer on sidewalls and an undersurface of the contact hole; forming a silicon spacer on the sidewalls of the contact hole by etching the silicon layer; transforming the silicon spacer to a silicon nitride spacer; depositing a diffusion barrier on the silicon nitride spacer; and filling the contact hole with tungsten. Because the silicon nitride spacer formed on the sidewalls of the contact hole can serve as a leakage current blocking layer, the yield and the reliability of the semiconductor devices manufactured by this example process are enhanced.
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Citations
18 Claims
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1. A method to form a contact comprising:
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forming an insulating layer on a substrate;
etching the insulating layer to form a contact hole;
depositing a silicon layer on sidewalls and an undersurface of the contact hole;
forming a silicon spacer on the sidewalls of the contact hole by etching the silicon layer;
plasma treating the silicon spacer to form a silicon nitride spacer;
depositing a diffusion barrier on the silicon nitride spacer; and
filling the contact hole with tungsten. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A method to form a contact comprising:
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forming an insulating layer on a substrate;
etching the insulating layer to form a contact hole;
depositing a silicon layer on sidewalls and an undersurface of the contact hole;
forming a silicon spacer on the sidewalls of the contact hole by etching the silicon layer;
annealing the silicon spacer through a N2 or NH3 gas atmosphere heat treatment to form a silicon nitride spacer;
depositing a diffusion barrier on the silicon nitride spacer; and
filling the contact hole with tungsten. - View Dependent Claims (12, 13, 14, 15, 16, 17)
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18. A semiconductor device comprising:
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a substrate;
an insulating layer on the substrate;
a contact hole in the insulating layer;
a silicon nitride spacer on sidewalls and an undersurface of the contact hole;
a diffusion barrier on the silicon nitride spacer; and
a conductive metal in the contact hole.
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Specification