Diffusion bonded assemblies and fabrication methods
First Claim
1. A diffusion bonded PVD target assembly comprising a target blank bonded directly to a backing plate, a majority crystal structure of the target blank comprising a HCP structure and the target blank comprising a magnetic material.
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Abstract
A diffusion bonded PVD target assembly (30) includes a target blank (34) bonded directly to a backing plate (32), a majority crystal structure of the target blank comprising a HCP structure. The target blank can include cobalt and the backing plate can include an aluminum or copper alloy. The target assembly can exhibit a thickness dependent high PTF, such as at least about 60%. A PVD target fabrication method includes diffusion bonding a target blank to a backing plate, a majority crystal structure of the target blank comprising a HCP structure; transitioning at least some of the HCP structure to a non-HCP structure; and restoring a majority of the non-HCP structure to the HCP structure. The transitioning can include hot pressing the target blank and backing plate at a temperature exceeding a HCP to non-HCP transition temperature of the target blank. The restoring can include cooling at a specified low rate.
25 Citations
43 Claims
- 1. A diffusion bonded PVD target assembly comprising a target blank bonded directly to a backing plate, a majority crystal structure of the target blank comprising a HCP structure and the target blank comprising a magnetic material.
- 9. A diffusion bonded PVD target assembly comprising a target blank bonded directly to a backing plate, the target blank consisting essentially of cobalt or a cobalt alloy, with cobalt as the predominate metal, and exhibiting a high PTF.
- 16. A diffusion bonded PVD target assembly comprising a target blank bonded to a backing plate, the target blank comprising a target surface and a magnetic material, a majority crystal structure of the target blank comprising a HCP structure, and a majority crystallographic orientation of the target blank comprising a {002} HCP plane that is substantially parallel to the target surface within a test region.
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22. A PVD target fabrication method comprising:
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diffusion bonding a target blank to a backing plate and forming a target assembly, a majority crystal structure of the target blank comprising a HCP structure;
transitioning at least some of the HCP structure to a non-HCP structure; and
restoring a majority of the non-HCP structure to the HCP structure. - View Dependent Claims (23, 24, 25, 26, 27, 28, 29, 30, 31, 32, 41)
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33. A PVD target fabrication method comprising:
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diffusion bonding a target blank to a backing plate at a bonding temperature and forming a target assembly; and
cooling the target blank from the bonding temperature to a room temperature of from about 10°
C. to about 30°
C. at a rate sufficient that PTF of the diffusion bonded target blank changes by greater than −
10% in comparison to the target blank PTF before the diffusion bonding. - View Dependent Claims (34, 35, 36, 37, 38, 42)
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39. A PVD target fabrication method comprising:
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diffusion bonding a cobalt-comprising target blank to an aluminum-comprising backing plate at a bonding temperature of greater than 412°
C. and forming a target assembly, the target blank exhibiting a PTF of at least about 60% before the diffusion bonding; and
cooling the target blank from the bonding temperature to a room temperature of from about 10°
C. to about 30°
C. at a rate of no more than about 5°
C. per minute, the diffusion bonded target assembly exhibiting a PTF of at least about 60% after the cooling. - View Dependent Claims (40, 43)
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Specification