Semiconductor device package manufacturing method and semiconductor device package manufactured by the method

• US 20040130024A1
• Filed: 12/17/2003
• Published: 07/08/2004
• Est. Priority Date: 07/16/1999
• Status: Active Grant

• Current Assignee: Hidenori Miyakawa, Norihito Tsukahara, Takashi Akiguchi
• Original Assignee: Hidenori Miyakawa, Norihito Tsukahara, Takashi Akiguchi
• Inventors: Miyakawa, Hidenori, Tsukahara, Norihito, Akiguchi, Takashi
• Granted Patent: US 7,090,482 B2
• Time in Patent Office: Days
• US Class Current: 257/737
• CPC Class Codes: G06K 19/07745 Mounting details of integrated circuit chips
• CPC Class Codes: H01L 21/56 Encapsulations, e.g. encapsulation layers, coatings
• CPC Class Codes: H01L 21/561 Batch processing
• CPC Class Codes: H01L 21/563 Encapsulation of active face of flip-chip device, e.g. underfilling or underencapsulation of flip-chip, encapsulation preform on chip or mounting substrate
• CPC Class Codes: H01L 21/568 Temporary substrate used as encapsulation process aid H01L21/4832 and H01L21/566 take precedence
• CPC Class Codes: H01L 2224/04105 Bonding areas formed on an encapsulation of the semiconductor or solid-state body, e.g. bonding areas on chip-scale packages
• CPC Class Codes: H01L 2224/05573 Single external layer
• CPC Class Codes: H01L 2224/05599 Material
• CPC Class Codes: H01L 2224/1134 Stud bumping, i.e. using a wire-bonding apparatus
• CPC Class Codes: H01L 2224/11822 by dipping, e.g. in a solder bath
• CPC Class Codes: H01L 2224/13099 Material
• CPC Class Codes: H01L 2224/131 with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
• CPC Class Codes: H01L 2224/13144 Gold [Au] as principal constituent
• CPC Class Codes: H01L 2224/13147 Copper [Cu] as principal constituent
• CPC Class Codes: H01L 2224/16225 the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 2224/16227 the bump connector connecting to a bond pad of the item
• CPC Class Codes: H01L 2224/18 High density interconnect [HDI] connectors; Manufacturing methods related thereto
• CPC Class Codes: H01L 2224/274 by blanket deposition of the material of the layer connector
• CPC Class Codes: H01L 2224/32225 the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 2224/73104 the bump connector being embedded into the layer connector
• CPC Class Codes: H01L 2224/73203 : Bump and layer connectors
• CPC Class Codes: H01L 2224/73204 : the bump connector being embedded into the layer connector
• CPC Class Codes: H01L 2224/82 : by forming build-up interconnects at chip-level, e.g. for high density interconnects [HDI]
• CPC Class Codes: H01L 2224/83102 : using surface energy, e.g. capillary forces
• CPC Class Codes: H01L 2224/83191 : wherein the layer connectors are disposed only on the semiconductor or solid-state body
• CPC Class Codes: H01L 2224/83192 : wherein the layer connectors are disposed only on another item or body to be connected to the semiconductor or solid-state body
• CPC Class Codes: H01L 2224/92125 : the second connecting process involving a layer connector
• CPC Class Codes: H01L 2224/97 : the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
• CPC Class Codes: H01L 23/3107 : the device being completely enclosed
• CPC Class Codes: H01L 23/49855 : for flat-cards, e.g. credit cards cards per se G06K19/00
• CPC Class Codes: H01L 24/18 : High density interconnect [HDI] connectors; Manufacturing methods related thereto interconnection structure between a plurality of semiconductor chips H01L23/5389
• CPC Class Codes: H01L 24/19 : Manufacturing methods of high density interconnect preforms
• CPC Class Codes: H01L 24/27 : Manufacturing methods
• CPC Class Codes: H01L 24/29 : of an individual layer connector
• CPC Class Codes: H01L 24/82 : by forming build-up interconnects at chip-level, e.g. for high density interconnects [HDI] interconnection structure between a plurality of semiconductor chips H01L23/5389
• CPC Class Codes: H01L 24/96 : the devices being encapsulated in a common layer, e.g. neo-wafer or pseudo-wafer, said common layer being separable into individual assemblies after connecting
• CPC Class Codes: H01L 24/97 : the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
• CPC Class Codes: H01L 2924/00 : Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00013 : Fully indexed content
• CPC Class Codes: H01L 2924/00014 : the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01005 : Boron [B]
• CPC Class Codes: H01L 2924/01006 : Carbon [C]
• CPC Class Codes: H01L 2924/01029 : Copper [Cu]
• CPC Class Codes: H01L 2924/01033 : Arsenic [As]
• CPC Class Codes: H01L 2924/01047 : Silver [Ag]
• CPC Class Codes: H01L 2924/0106 : Neodymium [Nd]
• CPC Class Codes: H01L 2924/01078 : Platinum [Pt]
• CPC Class Codes: H01L 2924/01079 : Gold [Au]
• CPC Class Codes: H01L 2924/01082 : Lead [Pb]
• CPC Class Codes: H01L 2924/014 : Solder alloys
• CPC Class Codes: H01L 2924/09701 : Low temperature co-fired ceramic [LTCC]
• CPC Class Codes: H01L 2924/14 : Integrated circuits
• CPC Class Codes: H01L 2924/15311 : being a ball array, e.g. BGA
• CPC Class Codes: H01L 2924/15787 : Ceramics, e.g. crystalline carbides, nitrides or oxides
• CPC Class Codes: H01L 2924/18161 : of a flip chip
• CPC Class Codes: H01L 2924/18162 : of a chip with build-up interconnect
• CPC Class Codes: H01L 2924/19041 : being a capacitor
• CPC Class Codes: H01L 2924/19043 : being a resistor
• CPC Class Codes: H01L 2924/19105 : in a side-by-side arrangement on a common die mounting substrate
• CPC Class Codes: H01L 2924/3511 : Warping

Abstract

A bump is formed on each element electrode of a semiconductor device, and a thermoplastic resin sheet is aligned in position with the semiconductor device. The sheet and the semiconductor device are subjected to hot pressing to melt the sheet, forming a thermoplastic resin portion that covers a portion other than the end surface of each bump of the semiconductor device. The thermoplastic resin portion obtained after the hot pressing is cut.

Claims

1. A semiconductor device-mounted component manufacturing apparatus for performing mounting of a semiconductor device on a circuit pattern, which is electrically connected to the semiconductor device while being brought in contact with a bump of the semiconductor device and is formed of a conductive paste on a pattern forming surface of a base material, the apparatus comprising:

a semiconductor device pressurizing device for inserting the semiconductor device from one surface of the base material and exposing an end surface of the bump at the other surface of the base material with the bump of the semiconductor device put in an exposed state or an unexposed state proximately to the pattern forming surface; and

a contact area increasing device for forming a contact area increasing portion for increasing a contact area of the circuit pattern with the bump that is exposed or located proximately to the pattern forming surface.

2. A semiconductor device-mounted component manufacturing apparatus as claimed in claim 1, wherein the contact area increasing device comprises:

an extension portion-forming member for forming the contact area increasing portion by coming in contact with the bump or in contact with the pattern forming surface located in the vicinity of the bump; and

an extension portion-forming member pressurizing device for pressurizing the extension portion-forming member against the bump or the pattern forming surface located in the vicinity of the bump.

3. A semiconductor device-mounted component manufacturing apparatus as claimed in claim 2, wherein

the extension portion-forming member has a cylindrical shape and forms a projecting portion that serves as the contact area increasing portion on the bump formed by a pressurizing operation for performing pressurization with the extension portion-forming member pressurizing device.

4. A semiconductor device-mounted component manufacturing apparatus as claimed in claim 2, wherein the extension portion-forming member has at its tip a rugged portion and forms a rugged portion as the contact area increasing portion on the bump formed by a pressurizing operation for performing pressurization with the extension portion-forming member pressurizing device.

5. A semiconductor device-mounted component manufacturing apparatus as claimed in claim 2, wherein the extension portion-forming member has a cylindrical shape and forms a contact area increasing groove in the vicinity of the bump by pressurizing the pattern forming surface located in the vicinity of the bump by a pressurizing operation for performing pressurization with the extension portion-forming member pressurizing device, thus exposing the bump from the base material.

6. A semiconductor device-mounted finished-product manufacturing apparatus comprising:

the semiconductor device-mounted component manufacturing apparatus claimed in claim 1;

and

an encapsulating device for encapsulating the semiconductor device-mounted component manufactured by the semiconductor device-mounted component manufacturing apparatus.

7. A semiconductor device-mounted finished-product comprising the semiconductor device-mounted component manufactured by the semiconductor device-mounted component manufacturing apparatus claimed in claim 1.

8. A semiconductor device-mounted finished-product manufactured by the semiconductor device-mounted finished-product manufacturing apparatus claimed in claim 6.

9. A semiconductor device-mounted finished-product claimed in claim 7, wherein the semiconductor device-mounted finished-product is a noncontact IC card.

10. A semiconductor device-mounted finished-product claimed in claim 8, wherein the semiconductor device-mounted finished-product is a noncontact IC card.