Method and system for context-specific mask inspection
First Claim
Patent Images
1. A method for inspecting a mask, comprising:
- generating integrated circuit design data; and
using information for interfeature relationships of the integrated circuit design data to inspect the mask.
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Abstract
A method for inspecting lithography masks includes generating integrated circuit design data and using context information from the integrated circuit design data to inspect a mask.
157 Citations
44 Claims
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1. A method for inspecting a mask, comprising:
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generating integrated circuit design data; and
using information for interfeature relationships of the integrated circuit design data to inspect the mask. - View Dependent Claims (2, 3, 4, 5)
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6. A method for performing metrology operations, including inspection, on a lithography photomask or wafer, comprising:
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generating integrated circuit design data; and
using context information from the integrated circuit design data to inspect the photomask or wafer. - View Dependent Claims (7, 8, 9, 10, 11, 12, 13, 14)
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15. A method for mask inspection, comprising:
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designing an integrated circuit, wherein design data from the integrated circuit design comprises polygonal shape, location, layout geography, circuit functionality and circuit criticality data for each mask element;
passing the design data to a context and priority analysis step;
analyzing design data for each mask element, wherein the analysis comprises comparing design data for each mask element to design data for other mask elements and to a predetermined set of mask criteria in order to determine a circuit function and circuit criticality context and priority for each mask element;
determining mask areas with similar resolution and analysis requirements;
including the circuit function and circuit criticality context and priority data and mask area data in a mask design data file; and
using the mask design data file to inspect a mask. - View Dependent Claims (16, 17, 18)
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19. A system for inspecting lithography masks, comprising:
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means for designing an integrated circuit, wherein design data from the integrated circuit design comprises polygonal shape, location, layout geography, circuit functionality and circuit criticality data for each mask element;
means for passing the design data to a context and priority analysis step;
means for analyzing design data for each mask element, wherein the analysis comprises comparing design data for each mask element to design data for other mask elements and to a predetermined set of mask criteria in order to determine a circuit function and circuit criticality context and priority for each mask element;
means for determining mask areas with similar resolution and analysis requirements;
means for including the circuit function and circuit criticality context and priority data and mask area data in a mask design data file; and
means for using the mask design data file to inspect a mask. - View Dependent Claims (20, 21, 22)
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23. A system for inspecting a mask, comprising:
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means for generating integrated circuit design data; and
means for using information for interfeature relationships of the integrated circuit design data to inspect the mask. - View Dependent Claims (24, 25, 26, 27)
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28. A system for performing metrology operations, including inspection, on a lithography photomask or wafer, comprising:
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means for generating integrated circuit design data; and
means for using context information from the integrated circuit design data to inspect the photomask or wafer. - View Dependent Claims (29, 30, 31, 32, 33, 34, 35, 36)
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37. A method comprising:
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writing a mask;
identifying an element of the mask having a potential mask defect;
determining a relationship between geometry and function of the element; and
determining if the potential mask defect is critical by using the relationship between geometry and function of the element.
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- 38. The method of claim 38 wherein the relationship is determined by process modeling.
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41. A system comprising:
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means for writing a mask;
means for identifying an element of the mask having a potential mask defect;
means for determining a relationship between geometry and function of the element; and
means for determining if the potential mask defect is critical by using the relationship between geometry and function of the element. - View Dependent Claims (42, 43, 44)
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Specification