Semiconductor light emitting device and fabrication method thereof

• US 20040135156A1
• Filed: 12/23/2003
• Published: 07/15/2004
• Est. Priority Date: 01/06/2003
• Status: Active Grant

• Current Assignee: LedComm LLC (IPValuation Partners, LLC)
• Original Assignee: Sharp Kabushiki Kaisha (Hon Hai Precision Industry Co., Ltd.)
• Inventors: Takenaka, Yasuji
• Granted Patent: US 7,012,277 B2
• Time in Patent Office: Days
• US Class Current: 257/79
• CPC Class Codes: H01L 2224/45144 Gold (Au) as principal constituent
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/73265 Layer and wire connectors
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 33/642 characterized by the shape
• CPC Class Codes: H01L 33/647 the elements conducting electric current to or from the semiconductor body

Abstract

A semiconductor light emitting device includes an LED chip, a first lead frame on which the LED chip is mounted, a second lead frame electrically connected to the LED chip via a bonding wire, and a resin portion surrounding the circumference of the LED chip, and fastening the first and second lead frames. A metal body is located under the region of the first lead frame where the LED chip is mounted.

Claims

1. A semiconductor light emitting device comprising:

an LED chip,

a first lead frame on which said LED chip is mounted,

a second lead frame electrically connected to said LED chip via a wire, and

a resin portion surrounding a circumference of said LED chip, and fastening said first and second lead frames,

wherein a metal body is located under a region of said first lead frame where said LED chip is mounted.

2. The semiconductor light emitting device according to claim 1, wherein said metal body is spaced apart from said first and second lead frames.

3. The semiconductor light emitting device according to claim 1, wherein said metal body forms contact with said first lead frame.

4. The semiconductor light emitting device according to claim 1, wherein

said metal body has a surface subjected to an electrical insulating process, and

said surface of said metal body subjected to said insulating process forms contact with said first lead frame.

5. The semiconductor light emitting device according to claim 1, comprising a plurality of LED chips.

6. The semiconductor light emitting device according to claim 1, wherein said metal body includes at least one type of material selected from the group consisting of copper, aluminum, copper alloy, and aluminum alloy.

7. A semiconductor light emitting device comprising:

an LED chip,

a metal body on which said LED chip is mounted,

a first lead frame electrically connected to said metal body,

a second lead frame electrically connected to said LED chip via a wire, and

a resin portion surrounding a circumference of said metal body and said LED chip, and fastening said first and second lead frames.

8. The semiconductor light emitting device according to claim 7, wherein

said metal body has a top portion worked in an upside down conical-frustum configuration, and

said top portion is fitted in said first lead frame.

9. The semiconductor light emitting device according to claim 7, wherein said metal body includes at least one type of material selected from the group consisting of copper, aluminum, copper alloy, and aluminum alloy.

10. A fabrication method of a semiconductor light emitting device comprising the steps of:

forming a resin portion holding a metal body and first and second lead frames by insert-molding, and

mounting an LED chip on one of said metal body and said first lead frame.

11. The fabrication method of a semiconductor light emitting device according to claim 10, further comprising the step of caulking said metal body and said first lead frame,

wherein a top portion of said metal body is worked in an upside down conical-frustum configuration simultaneous to said caulking step.

12. A fabrication method of a semiconductor light emitting device comprising the steps of:

forming, by insert-molding, a resin portion having a concave, and holding first and second lead frames,

attaching a metal body to said concave, and

mounting an LED chip on one of said metal body and said first lead frame.

13. The fabrication method of a semiconductor light emitting device according to claim 12, further comprising the step of caulking said metal body and said first lead frame,

wherein said metal body has a top portion worked to an upside down conical-frustum configuration simultaneous to said caulking step.