Noise-proof semiconductor device having a Hall effect element

• US 20040135220A1
• Filed: 12/23/2003
• Published: 07/15/2004
• Est. Priority Date: 12/25/2002
• Status: Active Grant

• Current Assignee: Sanken Electric Company Limited
• Original Assignee: Sanken Electric Company Limited
• Inventors: Goto, Hirokazu
• Granted Patent: US 6,921,955 B2
• Time in Patent Office: Days
• US Class Current: 257/427
• CPC Class Codes: G01R 15/202 using Hall-effect devices Hall elements in arrangements for measuring electrical power G01R21/08
• CPC Class Codes: H01L 2224/0603 Bonding areas having different sizes, e.g. different heights or widths
• CPC Class Codes: H01L 2224/32245 the item being metallic
• CPC Class Codes: H01L 2224/48247 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/48257 connecting the wire to a die pad of the item
• CPC Class Codes: H01L 2224/73265 Layer and wire connectors
• CPC Class Codes: H01L 24/06 of a plurality of bonding areas
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00012 Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/14 Integrated circuits
• CPC Class Codes: H01L 2924/181 Encapsulation
• CPC Class Codes: H01L 2924/19107 off-chip wires
• CPC Class Codes: H10B 61/00 Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
• CPC Class Codes: H10N 52/101 Semiconductor Hall-effect devices
• CPC Class Codes: H10N 59/00 Integrated devices, or assemblies of multiple devices, comprising at least one galvanomagnetic or Hall-effect element covered by groups H10N50/00 - H10N52/00 MRAM devices H10B61/00

Abstract

A noise-proof, integrated semiconductor current detector is disclosed which has formed in a semiconductor substrate a Hall generator for providing a Hall voltage in proportion to the strength of a magnetic field applied, a control current supply circuit for delivering a control current to the Hall generator, and a Hall voltage output circuit for putting out the Hall voltage for detection or measurement. The Hall generator, control current supply circuit, and Hall voltage output circuit are all exposed at one of the pair of opposite major surfaces of the semiconductor substrate. A current-path conductor is attached to this one major surface of the substrate via insulating layers for carrying a current to be detected. A shielding layer of highly electroconductive material is interposed between the current-path conductor and the substrate for protecting all of the Hall generator, control current supply circuit, and Hall voltage output circuit from noise from the current-path conductor as well as from external disturbances.

Claims

1. A semiconductor device having a Hall effect element and at least one other active component for use as a current detector or the like, comprising:

(a) a semiconductor substrate having a pair of opposite major surfaces and having the Hall effect element and said other active component formed therein, the Hall effect element and said other active component being exposed in part at one of the major surfaces of the semiconductor substrate;

(b) an electrically insulating layer formed on said one major surface of the semiconductor substrate; and

(c) a shielding layer formed on the insulating layer in overlying relationship to both the Hall effect element and said other active component.

2. A semiconductor device as defined in claim 1, further comprising:

(a) a second electrically insulating layer disposed on said shielding layer; and

(b) a current-path conductor disposed on the second insulating layer and so positioned thereon as to cause a magnetic field to act on the Hall effect element with strength in proportion to the magnitude of a current flowing through the current-path conductor.

3. A semiconductor device as defined in claim 1, wherein the shielding layer is of electroconductive material and is grounded.

4. A semiconductor device as defined in claim 1, further comprising a metal-made baseplate attached to the other major surface of the semiconductor substrate for protecting the Hall effect element and said other active component from noise in cooperation with the shielding layer.

5. A noise-proof, integrated semiconductor current detector comprising:

(a) a semiconductor substrate having a pair of opposite major surfaces;

(b) a Hall effect element formed in the semiconductor substrate for providing a voltage proportional to the strength of a magnetic field applied, the Hall effect element being exposed at one of the pair of major surfaces of the semiconductor substrate;

(c) a control current supply circuit formed in the semiconductor substrate and electrically connected to the Hall effect element for delivering a control current thereto, the control current supply circuit being exposed at said one major surface of the semiconductor substrate;

(d) a Hall voltage output circuit formed in the semiconductor substrate and electrically connected to the Hall effect element for putting out the voltage generated by the Hall effect element, the Hall voltage output circuit being exposed at said one major surface of the semiconductor substrate;

(e) an electrically insulating layer formed on said one major surface of the semiconductor substrate; and

(f) a shielding layer formed on the insulating layer in overlying relationship to both the Hall effect element, the control current supply circuit and the Hall voltage output circuit.

6. A noise-proof, integrated semiconductor current detector as defined in claim 5, further comprising:

(a) a second electrically insulating layer disposed on said shielding layer; and

(b) a current-path conductor disposed on the second insulating layer and extending along the Hall effect element for causing the same to generate a voltage in proportion to the magnitude of a current flowing through the current-path conductor.

7. A noise-proof, integrated semiconductor current detector as defined in claim 5, further comprising a metal-made baseplate attached to the other major surface of the semiconductor substrate for protecting the Hall effect element, the control current supply circuit and the Hall voltage output circuit from noise in cooperation with the shielding layer.

8. A noise-proof, integrated semiconductor current detector as defined in claim 7, wherein the shielding layer is electrically connected to the baseplate.