Electrically tunable fabry-perot structure utilizing a deformable multi-layer mirror and method of making the same
First Claim
1. An electrically tunable vertical cavity surface emitting laser comprising:
- a laterally-extending base comprising an optically-transparent semi-conductor material;
a first laterally-extending mirror comprising alternating layers of (i) said optically-transparent semiconductor material, and (ii) air;
a second laterally-extending mirror comprising alternating layers of (i) said optically-transparent semiconductor material, and (ii) air;
a laterally-extending layer of multiple quantum well material defining a laterally-extending P-I-N junction therein;
said first laterally extending mirror being fixedly mounted to said laterally extending base;
said laterally-extending layer of multiple quantum well material being fixedly mounted to said first laterally extending mirror;
said second laterally extending mirror being movably mounted to said laterally-extending layer of multiple quantum well material such that an air gap extends between said first laterally-extending mirror and said layer of multiple quantum well material;
a first electrode electrically connected to said first laterally-extending mirror; and
a second electrode electrically connected to said base;
whereby when a voltage difference is applied across said first and second electrodes, the electrically tunable, vertical cavity, surface emitting laser will change its lasing wavelength in response to the electrostatically induced movement of said first and second laterally-extending mirrors relative to one another.
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Accused Products
Abstract
An electrically tunable Fabry-Perot structure using a deformable multi-layer mirror construction wherein Ga1-aAlaAs, where a<0.1, is used as the sacrificial layer which may be selectively removed using a citric acid enchant. The multi-layer mirrors consist of N and M period of quarter wavelength layers where N and M are integers, or integers plus ½. Further, the mirrors are made from alternating layers of Ga1-xAlxAs, where x>0.96, and a material selected from the group consisting of either Ga1-zAlzAs, where 0.7>Z>0, or Ga1-yAlyAs/Ga1-zAlzAs/Ga1-yAlyAs where 0.7>Z>0 and y>0.5. The Ga1-xAlxAs is wet oxidized by exposing its edge to water in a nitrogen or helium atmosphere at a temperature of between about 360° C. and 450° C. so as to transform it to AlOx. The resulting AlOx layers abut the sacrificial layer and act as etch stops during the formation of a cantilever Fabry-Perot structure by etching of the sacrificial layer.
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Citations
17 Claims
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1. An electrically tunable vertical cavity surface emitting laser comprising:
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a laterally-extending base comprising an optically-transparent semi-conductor material;
a first laterally-extending mirror comprising alternating layers of (i) said optically-transparent semiconductor material, and (ii) air;
a second laterally-extending mirror comprising alternating layers of (i) said optically-transparent semiconductor material, and (ii) air;
a laterally-extending layer of multiple quantum well material defining a laterally-extending P-I-N junction therein;
said first laterally extending mirror being fixedly mounted to said laterally extending base;
said laterally-extending layer of multiple quantum well material being fixedly mounted to said first laterally extending mirror;
said second laterally extending mirror being movably mounted to said laterally-extending layer of multiple quantum well material such that an air gap extends between said first laterally-extending mirror and said layer of multiple quantum well material;
a first electrode electrically connected to said first laterally-extending mirror; and
a second electrode electrically connected to said base;
whereby when a voltage difference is applied across said first and second electrodes, the electrically tunable, vertical cavity, surface emitting laser will change its lasing wavelength in response to the electrostatically induced movement of said first and second laterally-extending mirrors relative to one another. - View Dependent Claims (2, 3)
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4. An electrically tunable vertical cavity surface emitting laser comprising:
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a laterally-extending base comprising an optically-transparent semiconductor material;
a first laterally-extending mirror comprising alternating layers of (i) said optically-transparent semiconductor material, and (ii) Al0x;
a second laterally-extending mirror comprising alternating layers of (i) said optically-transparent semiconductor material, and (ii) Al0x;
a laterally-extending layer of GaAlAs or GaInAs based multiple quantum well material defining a laterially-extending P-I-N junction therein;
said first laterally-extending mirror being fixedly mounted to said laterally-extending base;
said laterally-extending layer of GaAlAs or GaInAs based multiple quantum well material being fixedly mounted to said first laterally-extending mirror;
said second laterally-extending mirror being movably mounted to said laterally-extending layer such that an air gap extends between said laterally-extending layer and said second laterally-extending mirror;
a first electrode electrically connected to said first laterally-extending mirror; and
a second electrode electrically connected to said base;
whereby when a voltage difference is applied across said first and second electrodes, the electrically tunable vertical cavity surface omitting laser will change its lasing wavelength in response to the electrostatically induced movement of said first and second laterally-extending mirrors relative to one another. - View Dependent Claims (5, 6, 7)
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8. An electrically tunable optical filter comprising:
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a laterally-extending base comprising an optically-transparent GaAs material;
a first laterally-extending mirror comprising alternating layers of (i) a material selected from the group consisting of GaAs;
GaAlAs; and
Ga1-yAlyAs/Ga1-zAlzAs/Ga1-yAlyAs where y>
0.5 and Z<
0.7, and (ii) Al0x;
a second laterally-extending mirror comprising alternating layers of (i) a material selected from the group consisting of GaAs;
GaAlAs; and
Ga1-yAlyAs/Ga1-zAlzAs/Ga1-yAlyAs where y>
0.5 and Z<
0.7, and (ii) Al0x;
said first laterally-extending mirror being fixedly mounted to said laterally-extending base;
said second laterally-extending mirror being movably mounted to said first laterally-extending mirror such that an air gap extends between said first laterally-extending mirror and said second laterally-extending mirror;
a first electrode electrically connected to said first laterally-extending mirror; and
a second electrode electrically connected to said second laterally-extending mirror;
whereby when a voltage difference is applied across said first and second electrodes, the electrically tunable optical filter will change its spectral response.
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9. A method for making an electrically tunable Fabry-Perot structure, said method comprising the steps of:
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(1) providing a GaAs substrate having two epitaxially grown distributed Bragg reflectors separated by a sacrificial layer on one surface thereof;
(2) lithographically defining craters on said substrate;
(3) using a photoresist as a masking layer, etching the distributed Bragg reflectors until the sidewalls of the bottom distributed Bragg reflector are exposed;
(4) lithographically defining cantilever structures in said distributed Bragg reflector/sacrificial layer structure and metal electrodes at the base of said crater and on the top distributed Bragg reflector;
(5) depositing metal electrodes on the lithographically defined locations;
(6) lithographically defining a protection layer for use in the selective removal of portions of the distributed Bragg reflector layers; and
(7) removing selected portions of the distributed Bragg reflectors and the sacrificial layer by etching, whereby the top distributed Bragg reflector forms a cantilever relative to the bottom distributed Bragg reflector and the outer tips of the distributed Bragg reflectors each define a series of semiconductor fingers separated by air gaps. - View Dependent Claims (10, 11, 12, 13, 14, 15, 16, 17)
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Specification