Planar nanowire based sensor elements, devices, systems and methods for using and making same
First Claim
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1. A nanosensor, comprising:
- a semiconductor element integral to an insulating substrate, and having length and width dimensions parallel to the insulating substrate, and a depth dimension orthogonal to the insulating substrate, the depth dimension being less than 500 nm; and
a sensing surface electrically coupled to the semiconductor element, the sensing surface comprising at least a first functional moiety that is capable of interacting with a first analyte of interest.
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Abstract
Sensor elements, and devices that incorporate those elements are provided, where the sensor comprises a thin semiconductor nanowire that is disposed upon, and integral to, an insulating substrate, where the nanowire is electrically coupled to a sensing surface that binds or otherwise interacts with an analyte of interest to yield a measurable effect on the nanowire element. The methods utilize extremely thin semiconductor on insulator substrates to provide nanowire dimensions for sensing elements that are fabricated using conventional semiconductor fabrication processes.
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Citations
64 Claims
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1. A nanosensor, comprising:
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a semiconductor element integral to an insulating substrate, and having length and width dimensions parallel to the insulating substrate, and a depth dimension orthogonal to the insulating substrate, the depth dimension being less than 500 nm; and
a sensing surface electrically coupled to the semiconductor element, the sensing surface comprising at least a first functional moiety that is capable of interacting with a first analyte of interest. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26)
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27. A nanosensor, comprising:
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a semiconductor element having a longitudinal axis, and attached to an insulating substrate such that the longitudinal axis is parallel to the insulating substrate, wherein the semiconductor element comprises a depth dimension orthogonal to the substrate that is less than 500 nm;
first and second electrical contacts in electrical communication with the semiconductor element at first and second different points along the longitudinal axis, respectively; and
,a sensing surface electrically coupled to the semiconductor element, having at least a first functional moiety immobilized thereon, wherein interaction of an analyte of interest with the functional moiety induces a change in an electrical property of the semiconductor element.
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28. An array, comprising:
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a first nanosensor element comprising a first semiconductor element integral to an insulating substrate, and having a length and width dimensions parallel to the insulating substrate, and a depth dimension orthogonal to the insulating substrate, the depth dimension being less than 500 nm, and a first sensing surface electrically coupled to the semiconductor element, the first sensing surface comprising at least a first functional moiety for interacting with a first analyte of interest; and
,at least a second nanosensor element comprising a second semiconductor element integral to an insulating substrate, and having a length and width dimensions parallel to the insulating substrate, and a depth dimension orthogonal to the insulating substrate, the depth dimension being less than 500 nm, and a sensing surface electrically coupled to the second semiconductor element, the second sensing surface comprising at least a second functional moiety for interacting with a second analyte of interest. - View Dependent Claims (29, 30, 31, 32, 33, 34, 35, 36, 37, 38)
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39. A method of fabricating a nanosensor, comprising:
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providing a semiconductor layer on an insulating substrate, wherein the semiconductor layer is less than 500 nm thick;
defining an elongated structure from the semiconductor layer, the structure having length and width dimensions that are parallel to the insulating substrate, and a depth dimension orthogonal to the insulating substrate that is less than 500 nm; and
,providing a sensing surface electrically coupled to the elongated structure, the sensing surface comprising a functional moiety that interacts with an analyte of interest to induce a change in an electrical property of the elongated structure. - View Dependent Claims (40, 41, 42, 43, 44, 45, 46, 47, 48, 49)
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50. An analytical system, comprising:
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a nanosensor, comprising;
a semiconductor element integral to an insulating substrate, and having a length and width dimensions parallel to the insulating substrate, and a depth dimension orthogonal to the insulating substrate, the depth dimension being less than 500 nm, and a ratio of the length dimension to the depth dimension being greater than 500;
a sensing surface electrically coupled to the semiconductor element, the sensing surface comprising a functional moiety capable of interacting with an analyte of interest; and
,a detector electrically coupled to the nanosensor for measuring conductance of the semiconductor element. - View Dependent Claims (51, 52, 53, 54, 55, 56, 57, 58)
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59. A method of analyzing a sample material, comprising:
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providing a nanosensor comprising;
a semiconductor element integral to an insulating substrate, and having a length and width dimensions parallel to the insulating substrate, and a depth dimension orthogonal to the insulating substrate, the depth dimension being less than 500 nm;
a sensing surface electrically coupled to the semiconductor element, the sensing surface comprising a functional moiety capable of interacting with an analyte of interest; and
,contacting a sample material with the sensing surface of the nanosensor; and
determining a concentration of the analyte of interest in the sample material.
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- 60. The method of claim 60, wherein the depth dimension of the semiconductor element is less than 200 nm.
Specification