Methods of preventing oxidation of barrier metal of semiconductor devices
First Claim
1. A method of preventing oxidation of a barrier metal of a semiconductor device, the method comprising:
- forming a via hole in a substrate;
depositing Ti/Ti(1-x)AlxN as a first barrier metal layer on the bottom and sidewalls of the via hole by means of a plasma chemical vapor deposition;
filling the via hole with a plug material to form a via plug;
performing a planarization process to flatten the via plug;
depositing a second barrier metal layer and a metal line in sequence on the substrate including the via plug; and
depositing an ARC layer of Ti/Ti(1-x)AlxN on the metal line by means of a plasma chemical vapor deposition.
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Abstract
A method for preventing oxidation of a barrier metal layer of a semiconductor device is disclosed. The method comprises the following steps. Ti/Ti(1-x)AlxN is deposited on the bottom and sidewalls of a via hole in a substrate by a plasma chemical vapor deposition to form a first barrier metal layer. The via hole is filled with a plug material and a planarization process is performed to form a via plug. A second barrier metal layer and a metal line are deposited in sequence on the substrate including the via plug. Then, Ti/Ti(1-x)AlxN as an ARC layer is deposited on the metal line by a plasma chemical vapor deposition. Accordingly, the present invention can improve device reliability by controlling continuous oxidation of the barrier metal layer using Ti(1-x)AlxN formed by addition of aluminum to TiN.
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Citations
8 Claims
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1. A method of preventing oxidation of a barrier metal of a semiconductor device, the method comprising:
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forming a via hole in a substrate;
depositing Ti/Ti(1-x)AlxN as a first barrier metal layer on the bottom and sidewalls of the via hole by means of a plasma chemical vapor deposition;
filling the via hole with a plug material to form a via plug;
performing a planarization process to flatten the via plug;
depositing a second barrier metal layer and a metal line in sequence on the substrate including the via plug; and
depositing an ARC layer of Ti/Ti(1-x)AlxN on the metal line by means of a plasma chemical vapor deposition. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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Specification