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Methods of preventing oxidation of barrier metal of semiconductor devices

  • US 20040137717A1
  • Filed: 12/22/2003
  • Published: 07/15/2004
  • Est. Priority Date: 12/30/2002
  • Status: Active Grant
First Claim
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1. A method of preventing oxidation of a barrier metal of a semiconductor device, the method comprising:

  • forming a via hole in a substrate;

    depositing Ti/Ti(1-x)AlxN as a first barrier metal layer on the bottom and sidewalls of the via hole by means of a plasma chemical vapor deposition;

    filling the via hole with a plug material to form a via plug;

    performing a planarization process to flatten the via plug;

    depositing a second barrier metal layer and a metal line in sequence on the substrate including the via plug; and

    depositing an ARC layer of Ti/Ti(1-x)AlxN on the metal line by means of a plasma chemical vapor deposition.

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