Semiconductor differential circuit, oscillation apparatus, switching apparatus, amplifying apparatus, mixer apparatus and circuit apparatus using same, and semiconductor differential circuit placement method
First Claim
1. A semiconductor differential circuit comprising:
- a semiconductor substrate, a first semiconductor device formed on said semiconductor substrate, having a first gate electrode for having one of differential signals conveyed thereto and a first drain electrode for outputting one of the differential signals controlled by said first gate electrode;
a second semiconductor device formed on said semiconductor substrate, having a second gate electrode for having the other of said differential signals conveyed thereto and a second drain electrode for outputting the other of the differential signals controlled by said second gate electrode, and wherein;
said first drain electrode and said second drain electrode are placed in the proximity so that, at a predetermined frequency, it is equivalent to the one in which said first drain electrode is grounded via a first predetermined resistance, and said second drain electrode is grounded via a resistance of the same resistance value as said first predetermined resistance.
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Accused Products
Abstract
A semiconductor differential circuit comprising a semiconductor substrate, a first semiconductor device on the semiconductor substrate having a gate electrode for having one of differential signals conveyed thereto and a drain electrode for outputting one of the differential signals controlled by the gate electrode, a second semiconductor device formed on the semiconductor substrate having a gate electrode for having the other of the differential signals conveyed thereto and a drain electrode for outputting the other of the differential signals controlled by the gate electrode, and wherein the drain electrode and drain electrode are placed in the proximity so that, at a predetermined frequency, it is equivalent to the one in which the drain electrode is grounded via a predetermined resistance, and the drain electrode is grounded via the predetermined resistance.
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Citations
25 Claims
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1. A semiconductor differential circuit comprising:
- a semiconductor substrate,
a first semiconductor device formed on said semiconductor substrate, having a first gate electrode for having one of differential signals conveyed thereto and a first drain electrode for outputting one of the differential signals controlled by said first gate electrode;
a second semiconductor device formed on said semiconductor substrate, having a second gate electrode for having the other of said differential signals conveyed thereto and a second drain electrode for outputting the other of the differential signals controlled by said second gate electrode, and wherein;
said first drain electrode and said second drain electrode are placed in the proximity so that, at a predetermined frequency, it is equivalent to the one in which said first drain electrode is grounded via a first predetermined resistance, and said second drain electrode is grounded via a resistance of the same resistance value as said first predetermined resistance. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 11, 12, 13, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25)
- a semiconductor substrate,
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10. A semiconductor differential circuit comprising:
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a semiconductor substrate, a first semiconductor device, formed on said semiconductor substrate, having a first collector or base for having one of differential signals conveyed thereto; and
a second semiconductor device, formed on said semiconductor substrate, having a second collector or base for having the other of said differential signals conveyed thereto, and wherein;
said first collector or base and said second collector or base are placed in the proximity so that, at a predetermined frequency, it is equivalent to the one in which said first collector or base is grounded via a second predetermined resistance, and said second collector or base is grounded via a resistance of the same resistance value as said second predetermined resistance.
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14. A semiconductor differential circuit placement method comprising the steps of:
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forming on a semiconductor substrate a first semiconductor device having a first drain electrode for having one of differential signals conveyed thereto and a first gate electrode for controlling said one of the signals;
forming on said semiconductor substrate a second semiconductor device having a second drain electrode for having the other of said differential signals conveyed thereto and a second gate electrode for having said other signal conveyed thereto formed, and wherein;
said first drain electrode and said second drain electrode are placed in the proximity so that, at a predetermined frequency, it is equivalent to the one in which said first drain electrode is grounded via a first predetermined resistance, and said second drain electrode is grounded via a resistance of the same resistance value as said first predetermined resistance.
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Specification